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Title: Incorporation of spatially-resolved current density measurements with photoluminescence for advanced parameter imaging of solar cells

Abstract

The spatial distribution of device performance parameters of solar cells provides important insight into their operation, including the type and magnitude of conversion losses and potential areas of improvement. In most of the procedures used to create these parameter images, a uniform (i.e., global) short-circuit current density (JSC) is usually assumed. However, JSC is known to vary over the surface of a solar cell, especially in polycrystalline absorber materials like multicrystalline silicon. In this work, a high speed quantum efficiency measurement rastered over the surface of a solar cell is used to obtain images of JSC. These JSC images are then used to calculate images of series resistance, dark saturation current density, fill factor, and conversion efficiency. Comparisons are made between the images created with a global JSC and with the spatially-resolved JSC. Negligible variation is observed in the series resistance and dark saturation current density images, but a drastic change is observed in the efficiency images between these two methods.

Authors:
 [1];  [1];  [1];  [1]
  1. Univ. of Central Florida, Orlando, FL (United States)
Publication Date:
Research Org.:
Univ. of Central Florida, Orlando, FL (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1613500
Alternate Identifier(s):
OSTI ID: 1547429
Grant/Contract Number:  
EE0008155; EE-0008155
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Solar Energy Materials and Solar Cells
Additional Journal Information:
Journal Volume: 199; Journal ID: ISSN 0927-0248
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Hossain, Mohammad Jobayer, Schneller, Eric J., Li, Mengjie, and Davis, Kristopher O. Incorporation of spatially-resolved current density measurements with photoluminescence for advanced parameter imaging of solar cells. United States: N. p., 2019. Web. doi:10.1016/j.solmat.2019.04.012.
Hossain, Mohammad Jobayer, Schneller, Eric J., Li, Mengjie, & Davis, Kristopher O. Incorporation of spatially-resolved current density measurements with photoluminescence for advanced parameter imaging of solar cells. United States. https://doi.org/10.1016/j.solmat.2019.04.012
Hossain, Mohammad Jobayer, Schneller, Eric J., Li, Mengjie, and Davis, Kristopher O. 2019. "Incorporation of spatially-resolved current density measurements with photoluminescence for advanced parameter imaging of solar cells". United States. https://doi.org/10.1016/j.solmat.2019.04.012. https://www.osti.gov/servlets/purl/1613500.
@article{osti_1613500,
title = {Incorporation of spatially-resolved current density measurements with photoluminescence for advanced parameter imaging of solar cells},
author = {Hossain, Mohammad Jobayer and Schneller, Eric J. and Li, Mengjie and Davis, Kristopher O.},
abstractNote = {The spatial distribution of device performance parameters of solar cells provides important insight into their operation, including the type and magnitude of conversion losses and potential areas of improvement. In most of the procedures used to create these parameter images, a uniform (i.e., global) short-circuit current density (JSC) is usually assumed. However, JSC is known to vary over the surface of a solar cell, especially in polycrystalline absorber materials like multicrystalline silicon. In this work, a high speed quantum efficiency measurement rastered over the surface of a solar cell is used to obtain images of JSC. These JSC images are then used to calculate images of series resistance, dark saturation current density, fill factor, and conversion efficiency. Comparisons are made between the images created with a global JSC and with the spatially-resolved JSC. Negligible variation is observed in the series resistance and dark saturation current density images, but a drastic change is observed in the efficiency images between these two methods.},
doi = {10.1016/j.solmat.2019.04.012},
url = {https://www.osti.gov/biblio/1613500}, journal = {Solar Energy Materials and Solar Cells},
issn = {0927-0248},
number = ,
volume = 199,
place = {United States},
year = {Wed May 08 00:00:00 EDT 2019},
month = {Wed May 08 00:00:00 EDT 2019}
}

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Cited by: 5 works
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Works referenced in this record:

Spatially resolved series resistance of silicon solar cells obtained from luminescence imaging
journal, February 2007


Advanced luminescence based effective series resistance imaging of silicon solar cells
journal, November 2008


Evaluating luminescence based voltage images of silicon solar cells
journal, July 2010


Comparison of DLIT- and PL-based Local Solar Cell Efficiency Analysis
journal, January 2013


Improved local efficiency imaging via photoluminescence for silicon solar cells
journal, April 2014


Integration of spatially resolved ideality factor into local cell efficiency analysis with photoluminescence
journal, December 2017


Perimeter Recombination Characterization by Luminescence Imaging
journal, January 2016


Short-Circuit Current Density Imaging Via PL Image Evaluation Based on Implied Voltage Distribution
journal, March 2015


Short-circuit Current Density Imaging Methods for Silicon Solar Cells
journal, August 2015


Crystalline Silicon Device Loss Analysis Through Spatially Resolved Quantum Efficiency Measurements
journal, July 2017


Novel high efficiency quadruple junction solar cell with current matching and quantum efficiency simulations
journal, December 2016


Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence
journal, June 2005


The impact of voltage independent carriers on implied voltage measurements on silicon devices
journal, October 2016


The effect of diffusion-limited lifetime on implied current voltage curves based on photoluminescence data
journal, August 2007


Voltage calibration of luminescence images of silicon solar cells
journal, January 2014


Imaging the local ideality factor by contactless photoluminescence measurement
journal, July 2013


Local efficiency analysis of solar cells based on lock-in thermography
journal, December 2012


Fast and reliable calculation of the two-diode model without simplifications: Fast and reliable calculation of the two-diode model without simplifications
journal, November 2012