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Title: The Effects of Atomic Scale Strain Relaxation on the Electronic Properties of Monolayer MoS2

Abstract

The ability to control nanoscale electronic properties by introducing macroscopic strain is of critical importance for the implementation of 2D materials into flexible electronics and next generation strain engineering devices. In this work we correlate the atomic-scale lattice deformation with a systematic macroscopic bending of monolayer molybdenum disulfide films by using scanning tunneling microscopy and spectroscopy implemented with a custom-built sample holder to control the strain. Using this technique, we are able to induce strains of up to 3% before slipping effects take place and relaxation mechanisms prevail. We find a reduction of the quasiparticle bandgap of about 400 meV per percent local strain measured with a minimum gap of 1.2 eV. Furthermore, unintentional nanoscale strain relaxation of van der Waals monolayer sheets can negatively impact strain engineered device performance. Here we investigate such strain relaxation mechanisms that include 1D ripples and 2D wrinkles which alter the spatial electronic density of states and strain distribution on the atomic-scale.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1546065
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article
Journal Name:
ACS Nano
Additional Journal Information:
Journal Volume: 13; Journal Issue: 7
Country of Publication:
United States
Language:
English
Subject:
2-D Materials; Scanning Tunneling Microscopy; chemical vapor deposition; molybdenum disulfide; monolayer; scanning tunneling microscopy; strain engineering

Citation Formats

Trainer, Daniel J., Zhang, Yuan, Bobba, F., Xi, X X, Hla, Saw Wai, and Iavarone, Maria. The Effects of Atomic Scale Strain Relaxation on the Electronic Properties of Monolayer MoS2. United States: N. p., 2019. Web. doi:10.1021/acsnano.9b03652.
Trainer, Daniel J., Zhang, Yuan, Bobba, F., Xi, X X, Hla, Saw Wai, & Iavarone, Maria. The Effects of Atomic Scale Strain Relaxation on the Electronic Properties of Monolayer MoS2. United States. doi:10.1021/acsnano.9b03652.
Trainer, Daniel J., Zhang, Yuan, Bobba, F., Xi, X X, Hla, Saw Wai, and Iavarone, Maria. Wed . "The Effects of Atomic Scale Strain Relaxation on the Electronic Properties of Monolayer MoS2". United States. doi:10.1021/acsnano.9b03652.
@article{osti_1546065,
title = {The Effects of Atomic Scale Strain Relaxation on the Electronic Properties of Monolayer MoS2},
author = {Trainer, Daniel J. and Zhang, Yuan and Bobba, F. and Xi, X X and Hla, Saw Wai and Iavarone, Maria},
abstractNote = {The ability to control nanoscale electronic properties by introducing macroscopic strain is of critical importance for the implementation of 2D materials into flexible electronics and next generation strain engineering devices. In this work we correlate the atomic-scale lattice deformation with a systematic macroscopic bending of monolayer molybdenum disulfide films by using scanning tunneling microscopy and spectroscopy implemented with a custom-built sample holder to control the strain. Using this technique, we are able to induce strains of up to 3% before slipping effects take place and relaxation mechanisms prevail. We find a reduction of the quasiparticle bandgap of about 400 meV per percent local strain measured with a minimum gap of 1.2 eV. Furthermore, unintentional nanoscale strain relaxation of van der Waals monolayer sheets can negatively impact strain engineered device performance. Here we investigate such strain relaxation mechanisms that include 1D ripples and 2D wrinkles which alter the spatial electronic density of states and strain distribution on the atomic-scale.},
doi = {10.1021/acsnano.9b03652},
journal = {ACS Nano},
number = 7,
volume = 13,
place = {United States},
year = {2019},
month = {7}
}