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Title: CMOS Pixel Development for the ATLAS Experiment at HL-LHC. In: Proceedings of International Conference on Technology and Instrumentation in Particle Physics 2017

Abstract

The high luminosity upgrade of the LHC necessitates a complete exchange of the current ATLAS Inner Tracker for a purely silicon one. Large areas therefore have to be covered by radiation tolerant, low cost and low material budget silicon detectors. New approaches are being explored using CMOS pixel sensors, providing charge collection in a depleted layer. They are based on technologies that allow to use high depletion voltages and high resistivity wafers for large depletion depths with multiple nested wells, enabling for CMOS electronics to be embedded safely into the sensor substrate. We are investigating depleted CMOS pixel detectors with monolithic or hybrid designs in view of their suitability for high trigger rates, fast timing and the high radiation environment at HL-LHC. This paper will discuss recent results of the main candidate technologies and the current developments towards a monolithic solution.

Authors:
 [1]
  1. European Organization for Nuclear Research (CERN), Geneva (Switzerland); Lancaster Univ. (United Kingdom). Physics Dept.
Publication Date:
Research Org.:
Lawrence Berkeley National Laboratory-National Energy Research Scientific Computing Center (NERSC)
Sponsoring Org.:
USDOE
Contributing Org.:
ATLAS Collaboration
OSTI Identifier:
1545782
Resource Type:
Conference
Journal Name:
Springer Proceedings in Physics
Additional Journal Information:
Journal Volume: 213; Conference: International Conference on Technology and Instrumentation in Particle Physics 2017
Publisher:
Springer, Singapore
Country of Publication:
United States
Language:
English
Subject:
ATLAS ITk; CMOS pixel sensors; HV-CMOS; HR-CMOS; CCPD; DMAPS; Radiation hardness

Citation Formats

Ristic, B. CMOS Pixel Development for the ATLAS Experiment at HL-LHC. In: Proceedings of International Conference on Technology and Instrumentation in Particle Physics 2017. United States: N. p., 2018. Web. doi:10.1007/978-981-13-1316-5_80.
Ristic, B. CMOS Pixel Development for the ATLAS Experiment at HL-LHC. In: Proceedings of International Conference on Technology and Instrumentation in Particle Physics 2017. United States. doi:10.1007/978-981-13-1316-5_80.
Ristic, B. Mon . "CMOS Pixel Development for the ATLAS Experiment at HL-LHC. In: Proceedings of International Conference on Technology and Instrumentation in Particle Physics 2017". United States. doi:10.1007/978-981-13-1316-5_80.
@article{osti_1545782,
title = {CMOS Pixel Development for the ATLAS Experiment at HL-LHC. In: Proceedings of International Conference on Technology and Instrumentation in Particle Physics 2017},
author = {Ristic, B.},
abstractNote = {The high luminosity upgrade of the LHC necessitates a complete exchange of the current ATLAS Inner Tracker for a purely silicon one. Large areas therefore have to be covered by radiation tolerant, low cost and low material budget silicon detectors. New approaches are being explored using CMOS pixel sensors, providing charge collection in a depleted layer. They are based on technologies that allow to use high depletion voltages and high resistivity wafers for large depletion depths with multiple nested wells, enabling for CMOS electronics to be embedded safely into the sensor substrate. We are investigating depleted CMOS pixel detectors with monolithic or hybrid designs in view of their suitability for high trigger rates, fast timing and the high radiation environment at HL-LHC. This paper will discuss recent results of the main candidate technologies and the current developments towards a monolithic solution.},
doi = {10.1007/978-981-13-1316-5_80},
journal = {Springer Proceedings in Physics},
number = ,
volume = 213,
place = {United States},
year = {2018},
month = {1}
}

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Works referenced in this record:

First tests of a novel radiation hard CMOS sensor process for Depleted Monolithic Active Pixel Sensors
journal, June 2017


Active pixel sensors in high-voltage CMOS technologies for ATLAS
journal, August 2012


Active pixel sensors in AMS H18/H35 HV-CMOS technology for the ATLAS HL-LHC upgrade
journal, September 2016

  • Ristic, Branislav
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  • DOI: 10.1016/j.nima.2016.06.001

Radiation hardness studies of neutron irradiated CMOS sensors fabricated in the ams H18 high voltage process
journal, February 2016


Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype
journal, July 2016


Radiation hardness and timing studies of a monolithic TowerJazz pixel design for the new ATLAS Inner Tracker
journal, January 2017


Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade
journal, January 2017