Imaging Lateral Drift Kinetics to Understand Causes of Outdoor Degradation in Silicon Heterojunction Photovoltaic Modules
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
Lateral drift currents caused by partial or patterned illumination of photovoltaic cells have important implications for laser-based screening methods and luminescence imaging of fielded and lab-stressed modules. This study investigates the kinetics of carrier drift and bulk recombination following patterned illumination in commercial silicon heterojunctions with intrinsic thin layer (HIT) modules, comparing the kinetics between a ten-year field-weathered module versus a control module that is stored indoors. The measurement of the microwave photoconductance decay (uPCD) transients in the modules, both coincident with the photoexcitation and in nonilluminated cell regions, reveals carrier drift on the 100 us timescale, followed by millisecond bulk lifetimes. Importantly, the uPCD transients are consistent with luminescence spreading over the cell, which is imaged using a time-gated InGaAs array camera. The weathered HIT module shows slower lateral drift and faster bulk lifetimes compared with the control, suggesting increased series resistance and accelerated nonradiative recombination in this module, attributable to degradation of the transparent conductive oxide and degradation of the passivation layer, respectively. These results provide a novel example of using time-resolved measurements directly on full photovoltaic modules to reveal causes of degradation, providing insight for further development of module imaging and screening capabilities.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- Grant/Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1545003
- Alternate ID(s):
- OSTI ID: 1514724
- Report Number(s):
- NREL/JA-5K00-73528
- Journal Information:
- Solar RRL, Vol. 3, Issue 8; ISSN 2367-198X
- Publisher:
- WileyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Similar Records
Degradation-related defect level in weathered silicon heterojunction modules characterized by deep level transient spectroscopy
Comparison of Photovoltaic Module Luminescence Imaging Techniques: Assessing the Influence of Lateral Currents in High-Efficiency Device Structures