Coherent, atomically thin transition-metal dichalcogenide superlattices with engineered strain

Xie, Saien; Tu, Lijie; Han, Yimo; Huang, Lujie; Kang, Kibum; Lao, Ka Un; Poddar, Preeti; Park, Chibeom; Muller, David A.; DiStasio, Robert A.; Park, Jiwoong

doi:10.1126/science.aao5360

Title: Coherent, atomically thin transition-metal dichalcogenide superlattices with engineered strain

Journal Article · Thu Mar 08 00:00:00 EST 2018 · Science

DOI:https://doi.org/10.1126/science.aao5360· OSTI ID:1544003

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Cornell Univ., Ithaca, NY (United States); Univ. of Chicago, IL (United States)
Cornell Univ., Ithaca, NY (United States)
Univ. of Chicago, IL (United States)
Univ. of Chicago, IL (United States); Cornell Univ., Ithaca, NY (United States)

Epitaxy forms the basis of modern electronics and optoelectronics. We report coherent atomically thin superlattices in which different transition metal dichalcogenide monolayers—despite large lattice mismatches—are repeated and laterally integrated without dislocations within the monolayer plane. Grown by an omnidirectional epitaxy, these superlattices display fully matched lattice constants across heterointerfaces while maintaining an isotropic lattice structure and triangular symmetry. This strong epitaxial strain is precisely engineered via the nanoscale supercell dimensions, thereby enabling broad tuning of the optical properties and producing photoluminescence peak shifts as large as 250 millielectron volts. We present theoretical models to explain this coherent growth and the energetic interplay governing the ripple formation in these strained monolayers. Such coherent superlattices provide building blocks with targeted functionalities at the atomically thin limit.

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Research Organization:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC); Univ. of California, Oakland, CA (United States); Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: AC02-05CH11231; AC02-06CH11357

OSTI ID:: 1544003

Journal Information:: Science, Vol. 359, Issue 6380; ISSN 0036-8075

Publisher:: AAAS

Country of Publication:: United States

Language:: English

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