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Title: Influence of defects and doping on phonon transport properties of monolayer MoSe 2

Abstract

Not provided.

Authors:
ORCiD logo; ;
Publication Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC); Univ. of California, Oakland, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1543954
DOE Contract Number:  
AC02-05CH11231
Resource Type:
Journal Article
Journal Name:
2D Materials
Additional Journal Information:
Journal Volume: 5; Journal Issue: 3; Journal ID: ISSN 2053-1583
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
Materials Science

Citation Formats

Yan, Zhequan, Yoon, Mina, and Kumar, Satish. Influence of defects and doping on phonon transport properties of monolayer MoSe 2. United States: N. p., 2018. Web. doi:10.1088/2053-1583/aabd54.
Yan, Zhequan, Yoon, Mina, & Kumar, Satish. Influence of defects and doping on phonon transport properties of monolayer MoSe 2. United States. doi:10.1088/2053-1583/aabd54.
Yan, Zhequan, Yoon, Mina, and Kumar, Satish. Mon . "Influence of defects and doping on phonon transport properties of monolayer MoSe 2". United States. doi:10.1088/2053-1583/aabd54.
@article{osti_1543954,
title = {Influence of defects and doping on phonon transport properties of monolayer MoSe 2},
author = {Yan, Zhequan and Yoon, Mina and Kumar, Satish},
abstractNote = {Not provided.},
doi = {10.1088/2053-1583/aabd54},
journal = {2D Materials},
issn = {2053-1583},
number = 3,
volume = 5,
place = {United States},
year = {2018},
month = {4}
}