Ternary nitride semiconductors in the rocksalt crystal structure
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401,
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401,, Department of Chemical and Biological Engineering, University of Colorado, Boulder, Boulder, CO 80309,
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401,, Department of Physics, Colorado School of Mines, Golden, CO 80401,
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401,, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,, Applied Science and Technology Graduate Group, University of California, Berkeley, CA 94720,
- Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, CO 80401,
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,, Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
Inorganic nitrides with wurtzite crystal structures are well-known semiconductors used in optical and electronic devices. In contrast, rocksalt-structured nitrides are known for their superconducting and refractory properties. Breaking this dichotomy, here we report ternary nitride semiconductors with rocksalt crystal structures, remarkable electronic properties, and the general chemical formula MgxTM1-xN (TM= Ti, Zr, Hf, Nb). Our experiments show that these materials form over a broad metal composition range, and that Mg-rich compositions are nondegenerate semiconductors with visible-range optical absorption onsets (1.8 to 2.1 eV) and up to 100 cm2V-1s-1electron mobility for MgZrN2grown on MgO substrates. Complementary ab initio calculations reveal that these materials have disorder-tunable optical absorption, large dielectric constants, and electronic bandgaps that are relatively insensitive to disorder. These ternary MgxTM1-xN semiconductors are also structurally compatible both with binaryTMN superconductors and main-group nitride semiconductors along certain crystallographic orientations. Overall, these results highlight MgxTM1-xN as a class of materials combining the semiconducting properties of main-group wurtzite nitrides and rocksalt structure of superconducting transition-metal nitrides.
- Research Organization:
- Energy Frontier Research Centers (EFRC) (United States). Center for Next Generation of Materials by Design: Incorporating Metastability (CNGMD); National Renewable Energy Laboratory (NREL), Golden, CO (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC36-08GO28308; AC02-05CH11231
- OSTI ID:
- 1564313
- Alternate ID(s):
- OSTI ID: 1543124; OSTI ID: 1561931
- Report Number(s):
- NREL/JA-5K00-72466
- Journal Information:
- Proceedings of the National Academy of Sciences of the United States of America, Journal Name: Proceedings of the National Academy of Sciences of the United States of America Vol. 116 Journal Issue: 30; ISSN 0027-8424
- Publisher:
- Proceedings of the National Academy of SciencesCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
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