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Title: Electronic structure and 4$f$-electron character in Ce 2PdIn 8 studied by angle-resolved photoemission spectroscopy

Abstract

The localized-to-itinerant transition of $f$ electrons lies at the heart of heavy-fermion physics, but has only been directly observed in single-layer Ce-based materials. Here, we report a comprehensive study on the electronic structure and nature of the Ce 4$f$ electrons in the heavy-fermion superconductor Ce 2PdIn 8, a typical n = 2 Ce nMmIn 3n+2m compound, using high-resolution and 4$d$–4$f$ resonant photoemission spectroscopies. The electronic structure of this material has been studied over a wide temperature range, and hybridization between f and conduction electrons can be clearly observed to form a Kondo resonance near the Fermi level at low temperatures. Here, the characteristic temperature of the localized-to-itinerant transition is around 120 K, which is much higher than its coherence temperature T coh ~ 30K.

Authors:
 [1];  [2];  [3];  [2];  [4];  [4];  [4];  [4];  [5];  [6];  [7];  [8];  [9]
  1. Fudan Univ., Shanghai (China); Chinese Academy of Sciences, Shanghai (China)
  2. Polish Academy of Sciences, Wroclaw (Poland)
  3. Polish Academy of Sciences, Wroclaw (Poland); Ames Lab. and Iowa State Univ., Ames, IA (United States)
  4. Fudan Univ., Shanghai (China)
  5. Harwell Science and Innovation Campus, Didcot (United Kingdom)
  6. Zhejiang Univ., Zhejiang (China)
  7. Science and Technology on Surface Physics and Chemistry Lab., Mianyang (China)
  8. Chinese Academy of Sciences, Shanghai (China); CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai (China)
  9. Fudan Univ., Shanghai (China); Collaborative Innovation Center of Advanced Microstructures, Nanjing (China)
Publication Date:
Research Org.:
Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1542942
Alternate Identifier(s):
OSTI ID: 1493650
Report Number(s):
IS-J-9893
Journal ID: ISSN 2469-9950; PRBMDO
Grant/Contract Number:  
11874330; 11274332; 11574337; 11704073; 11504342; U1332209; 2016YFA0300200; 2017YFA0303104; 2015/19/B/ST3/03158; AC02-07CH11358
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 99; Journal Issue: 8; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE

Citation Formats

Yao, Q., Kaczorowski, D., Swatek, P., Gnida, D., Wen, C. H. P., Niu, X. H., Peng, R., Xu, H. C., Dudin, P., Kirchner, S., Chen, Q. Y., Shen, D. W., and Feng, D. L. Electronic structure and 4$f$-electron character in Ce2PdIn8 studied by angle-resolved photoemission spectroscopy. United States: N. p., 2019. Web. doi:10.1103/PhysRevB.99.081107.
Yao, Q., Kaczorowski, D., Swatek, P., Gnida, D., Wen, C. H. P., Niu, X. H., Peng, R., Xu, H. C., Dudin, P., Kirchner, S., Chen, Q. Y., Shen, D. W., & Feng, D. L. Electronic structure and 4$f$-electron character in Ce2PdIn8 studied by angle-resolved photoemission spectroscopy. United States. doi:10.1103/PhysRevB.99.081107.
Yao, Q., Kaczorowski, D., Swatek, P., Gnida, D., Wen, C. H. P., Niu, X. H., Peng, R., Xu, H. C., Dudin, P., Kirchner, S., Chen, Q. Y., Shen, D. W., and Feng, D. L. Wed . "Electronic structure and 4$f$-electron character in Ce2PdIn8 studied by angle-resolved photoemission spectroscopy". United States. doi:10.1103/PhysRevB.99.081107.
@article{osti_1542942,
title = {Electronic structure and 4$f$-electron character in Ce2PdIn8 studied by angle-resolved photoemission spectroscopy},
author = {Yao, Q. and Kaczorowski, D. and Swatek, P. and Gnida, D. and Wen, C. H. P. and Niu, X. H. and Peng, R. and Xu, H. C. and Dudin, P. and Kirchner, S. and Chen, Q. Y. and Shen, D. W. and Feng, D. L.},
abstractNote = {The localized-to-itinerant transition of $f$ electrons lies at the heart of heavy-fermion physics, but has only been directly observed in single-layer Ce-based materials. Here, we report a comprehensive study on the electronic structure and nature of the Ce 4$f$ electrons in the heavy-fermion superconductor Ce2PdIn8, a typical n = 2 CenMmIn3n+2m compound, using high-resolution and 4$d$–4$f$ resonant photoemission spectroscopies. The electronic structure of this material has been studied over a wide temperature range, and hybridization between f and conduction electrons can be clearly observed to form a Kondo resonance near the Fermi level at low temperatures. Here, the characteristic temperature of the localized-to-itinerant transition is around 120 K, which is much higher than its coherence temperature Tcoh ~ 30K.},
doi = {10.1103/PhysRevB.99.081107},
journal = {Physical Review B},
issn = {2469-9950},
number = 8,
volume = 99,
place = {United States},
year = {2019},
month = {2}
}

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Works referenced in this record:

Generalized Gradient Approximation Made Simple
journal, October 1996

  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865

Special points for Brillouin-zone integrations
journal, June 1976

  • Monkhorst, Hendrik J.; Pack, James D.
  • Physical Review B, Vol. 13, Issue 12, p. 5188-5192
  • DOI: 10.1103/PhysRevB.13.5188