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Title: Carrier-selective contact GaP/Si solar cells grown by molecular beam epitaxy

Abstract

Abstract

Authors:
; ; ;
Publication Date:
Research Org.:
Arizona State Univ., Tempe, AZ (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1541930
DOE Contract Number:  
EE0006335
Resource Type:
Journal Article
Journal Name:
Journal of Materials Research
Additional Journal Information:
Journal Volume: 33; Journal Issue: 4; Journal ID: ISSN 0884-2914
Publisher:
Materials Research Society
Country of Publication:
United States
Language:
English
Subject:
Materials Science

Citation Formats

Zhang, Chaomin, Vadiee, Ehsan, King, Richard R., and Honsberg, Christiana B. Carrier-selective contact GaP/Si solar cells grown by molecular beam epitaxy. United States: N. p., 2018. Web. doi:10.1557/jmr.2018.14.
Zhang, Chaomin, Vadiee, Ehsan, King, Richard R., & Honsberg, Christiana B. Carrier-selective contact GaP/Si solar cells grown by molecular beam epitaxy. United States. doi:10.1557/jmr.2018.14.
Zhang, Chaomin, Vadiee, Ehsan, King, Richard R., and Honsberg, Christiana B. Wed . "Carrier-selective contact GaP/Si solar cells grown by molecular beam epitaxy". United States. doi:10.1557/jmr.2018.14.
@article{osti_1541930,
title = {Carrier-selective contact GaP/Si solar cells grown by molecular beam epitaxy},
author = {Zhang, Chaomin and Vadiee, Ehsan and King, Richard R. and Honsberg, Christiana B.},
abstractNote = {Abstract},
doi = {10.1557/jmr.2018.14},
journal = {Journal of Materials Research},
issn = {0884-2914},
number = 4,
volume = 33,
place = {United States},
year = {2018},
month = {2}
}