Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF ₃ /O ₂ mixtures

Journal Article · Thu Mar 01 00:00:00 EST 2018 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.5019673· OSTI ID:1541666

Huang, Shuo ^[1]; Volynets, Vladimir ^[2]; Hamilton, James R. ^[3]; Nam, Sang Ki ^[2]; Song, In-Cheol ^[2]; Lu, Siqing ^[2]; Tennyson, Jonathan ^[3]; Kushner, Mark J. ^[1]

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1. Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109-2122
2. Samsung Electronics Co., Ltd., 129 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-742, South Korea
3. Department of Physics and Astronomy, University College London, London WC1E 6BT, United Kingdom

Not provided.

• Research Organization: Univ. of Michigan, Ann Arbor, MI (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: SC0014132
• OSTI ID: 1541666
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 36, Issue 2; ISSN 0734-2101
• Publisher: American Vacuum Society
• Country of Publication: United States
• Language: English

Related Subjects

Materials Science
Physics