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Title: Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF 3 /O 2 mixtures

Abstract

Not provided.

Authors:
 [1];  [2];  [3];  [2];  [2];  [2];  [3];  [1]
  1. Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109-2122
  2. Samsung Electronics Co., Ltd., 129 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-742, South Korea
  3. Department of Physics and Astronomy, University College London, London WC1E 6BT, United Kingdom
Publication Date:
Research Org.:
Univ. of Michigan, Ann Arbor, MI (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1541666
DOE Contract Number:  
SC0014132
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Volume: 36; Journal Issue: 2; Journal ID: ISSN 0734-2101
Publisher:
American Vacuum Society
Country of Publication:
United States
Language:
English
Subject:
Materials Science; Physics

Citation Formats

Huang, Shuo, Volynets, Vladimir, Hamilton, James R., Nam, Sang Ki, Song, In-Cheol, Lu, Siqing, Tennyson, Jonathan, and Kushner, Mark J. Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF 3 /O 2 mixtures. United States: N. p., 2018. Web. doi:10.1116/1.5019673.
Huang, Shuo, Volynets, Vladimir, Hamilton, James R., Nam, Sang Ki, Song, In-Cheol, Lu, Siqing, Tennyson, Jonathan, & Kushner, Mark J. Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF 3 /O 2 mixtures. United States. doi:10.1116/1.5019673.
Huang, Shuo, Volynets, Vladimir, Hamilton, James R., Nam, Sang Ki, Song, In-Cheol, Lu, Siqing, Tennyson, Jonathan, and Kushner, Mark J. Thu . "Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF 3 /O 2 mixtures". United States. doi:10.1116/1.5019673.
@article{osti_1541666,
title = {Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF 3 /O 2 mixtures},
author = {Huang, Shuo and Volynets, Vladimir and Hamilton, James R. and Nam, Sang Ki and Song, In-Cheol and Lu, Siqing and Tennyson, Jonathan and Kushner, Mark J.},
abstractNote = {Not provided.},
doi = {10.1116/1.5019673},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
issn = {0734-2101},
number = 2,
volume = 36,
place = {United States},
year = {2018},
month = {3}
}