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Title: In situ annealing of III 1- x Mn x V ferromagnetic semiconductors

Abstract

Not provided.

Authors:
 [1];  [2];  [3]; ; ; ;  [4];  [3]; ;
  1. Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556
  2. Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 and Department of Physics, Korea University, Seoul 136-701, South Korea
  3. Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 and Radiation Laboratory, University of Notre Dame, Notre Dame, Indiana 46556
  4. Department of Physics, Korea University, Seoul 136-701, South Korea
Publication Date:
Research Org.:
Univ. of Notre Dame, IN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1541664
DOE Contract Number:  
FC02-04ER15533
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics
Additional Journal Information:
Journal Volume: 36; Journal Issue: 2; Journal ID: ISSN 2166-2746
Publisher:
American Vacuum Society/AIP
Country of Publication:
United States
Language:
English
Subject:
Engineering; Science & Technology - Other Topics; Physics

Citation Formats

Liu, Xinyu, Bac, Seul-Ki, Sapkota, Pitambar, Gorsak, Cameron, Li, Xiang, Dong, Sining, Lee, Sanghoon, Ptasinska, Sylwia, Furdyna, Jacek K., and Dobrowolska, Margaret. In situ annealing of III 1- x Mn x V ferromagnetic semiconductors. United States: N. p., 2018. Web. doi:10.1116/1.5014983.
Liu, Xinyu, Bac, Seul-Ki, Sapkota, Pitambar, Gorsak, Cameron, Li, Xiang, Dong, Sining, Lee, Sanghoon, Ptasinska, Sylwia, Furdyna, Jacek K., & Dobrowolska, Margaret. In situ annealing of III 1- x Mn x V ferromagnetic semiconductors. United States. doi:10.1116/1.5014983.
Liu, Xinyu, Bac, Seul-Ki, Sapkota, Pitambar, Gorsak, Cameron, Li, Xiang, Dong, Sining, Lee, Sanghoon, Ptasinska, Sylwia, Furdyna, Jacek K., and Dobrowolska, Margaret. Thu . "In situ annealing of III 1- x Mn x V ferromagnetic semiconductors". United States. doi:10.1116/1.5014983.
@article{osti_1541664,
title = {In situ annealing of III 1- x Mn x V ferromagnetic semiconductors},
author = {Liu, Xinyu and Bac, Seul-Ki and Sapkota, Pitambar and Gorsak, Cameron and Li, Xiang and Dong, Sining and Lee, Sanghoon and Ptasinska, Sylwia and Furdyna, Jacek K. and Dobrowolska, Margaret},
abstractNote = {Not provided.},
doi = {10.1116/1.5014983},
journal = {Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics},
issn = {2166-2746},
number = 2,
volume = 36,
place = {United States},
year = {2018},
month = {3}
}