Thermal adsorption-enhanced atomic layer etching of Si 3 N 4
Journal Article
·
· Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
- Department of Chemical Engineering, Stanford University, 443 Via Ortega, Stanford, California 94305 and Division of Advanced Materials Engineering, Chonbuk National University, Jeonbuk 54896, South Korea
- Samsung Electronics, Manufacturing Technology Center, San 1-1 Banwol-Dong, Hwasung-Si, Gyeonggi-Do 445-330, South Korea
- Department of Chemical Engineering, Stanford University, 443 Via Ortega, Stanford, California 94305
Not provided.
- Research Organization:
- Stanford Univ., CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- SC0004782
- OSTI ID:
- 1541660
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 36, Issue 1; ISSN 0734-2101
- Publisher:
- American Vacuum Society
- Country of Publication:
- United States
- Language:
- English
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