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Title: Collector Transport in SiGe HBTs Operating at Cryogenic Temperatures

Abstract

Not provided.

Authors:
; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Georgia Inst. of Technology, Atlanta, GA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1541501
DOE Contract Number:  
FG02-06ER46281; NA0003525
Resource Type:
Journal Article
Journal Name:
IEEE Transactions on Electron Devices
Additional Journal Information:
Journal Volume: 65; Journal Issue: 9; Journal ID: ISSN 0018-9383
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
Engineering; Physics

Citation Formats

Ying, Hanbin, Dark, Jason, Omprakash, Anup P., Wier, Brian R., Ge, Luwei, Raghunathan, Uppili, Lourenco, Nelson E., Fleetwood, Zachary E., Mourigal, Martin, Davidovic, Dragomir, and Cressler, John D. Collector Transport in SiGe HBTs Operating at Cryogenic Temperatures. United States: N. p., 2018. Web. doi:10.1109/ted.2018.2854288.
Ying, Hanbin, Dark, Jason, Omprakash, Anup P., Wier, Brian R., Ge, Luwei, Raghunathan, Uppili, Lourenco, Nelson E., Fleetwood, Zachary E., Mourigal, Martin, Davidovic, Dragomir, & Cressler, John D. Collector Transport in SiGe HBTs Operating at Cryogenic Temperatures. United States. doi:10.1109/ted.2018.2854288.
Ying, Hanbin, Dark, Jason, Omprakash, Anup P., Wier, Brian R., Ge, Luwei, Raghunathan, Uppili, Lourenco, Nelson E., Fleetwood, Zachary E., Mourigal, Martin, Davidovic, Dragomir, and Cressler, John D. Sat . "Collector Transport in SiGe HBTs Operating at Cryogenic Temperatures". United States. doi:10.1109/ted.2018.2854288.
@article{osti_1541501,
title = {Collector Transport in SiGe HBTs Operating at Cryogenic Temperatures},
author = {Ying, Hanbin and Dark, Jason and Omprakash, Anup P. and Wier, Brian R. and Ge, Luwei and Raghunathan, Uppili and Lourenco, Nelson E. and Fleetwood, Zachary E. and Mourigal, Martin and Davidovic, Dragomir and Cressler, John D.},
abstractNote = {Not provided.},
doi = {10.1109/ted.2018.2854288},
journal = {IEEE Transactions on Electron Devices},
issn = {0018-9383},
number = 9,
volume = 65,
place = {United States},
year = {2018},
month = {9}
}