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Title: Operation of 1.2-kV 4H-SiC Accumulation and Inversion Channel Split-Gate (SG) MOSFETs at Elevated Temperatures

Abstract

Not provided.

Authors:
ORCiD logo; ORCiD logo
Publication Date:
Research Org.:
North Carolina State Univ., Raleigh, NC (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1541500
DOE Contract Number:  
EE0006521
Resource Type:
Journal Article
Journal Name:
IEEE Transactions on Electron Devices
Additional Journal Information:
Journal Volume: 65; Journal Issue: 8; Journal ID: ISSN 0018-9383
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
Engineering; Physics

Citation Formats

Han, Kijeong, and Baliga, B. J. Operation of 1.2-kV 4H-SiC Accumulation and Inversion Channel Split-Gate (SG) MOSFETs at Elevated Temperatures. United States: N. p., 2018. Web. doi:10.1109/ted.2018.2841940.
Han, Kijeong, & Baliga, B. J. Operation of 1.2-kV 4H-SiC Accumulation and Inversion Channel Split-Gate (SG) MOSFETs at Elevated Temperatures. United States. doi:10.1109/ted.2018.2841940.
Han, Kijeong, and Baliga, B. J. Wed . "Operation of 1.2-kV 4H-SiC Accumulation and Inversion Channel Split-Gate (SG) MOSFETs at Elevated Temperatures". United States. doi:10.1109/ted.2018.2841940.
@article{osti_1541500,
title = {Operation of 1.2-kV 4H-SiC Accumulation and Inversion Channel Split-Gate (SG) MOSFETs at Elevated Temperatures},
author = {Han, Kijeong and Baliga, B. J.},
abstractNote = {Not provided.},
doi = {10.1109/ted.2018.2841940},
journal = {IEEE Transactions on Electron Devices},
issn = {0018-9383},
number = 8,
volume = 65,
place = {United States},
year = {2018},
month = {8}
}