On the effect of Ga and In substitutions in the Ca 11 Bi 10 and Yb 11 Bi 10 bismuthides crystallizing in the tetragonal Ho 11 Ge 10 structure type
The Ga- and In-substituted bismuthides Ca11GaxBi10–x, Ca11InxBi10–x, Yb11GaxBi10–x, and Yb11InxBi10–x(x< 2) can be readily synthesized employing molten Ga or In metals as fluxes. They crystallize in the tetragonal space groupI4/mmmand adopt the Ho11Ge10structure type (Pearson codetI84; Wyckoff sequencen2m j h2e2d). The structural response to the substitution of Bi with smaller and electron-poorer In or Ga has been studied by single-crystal X-ray diffraction methods for the case of Ca11InxBi10–x[x= 1.73 (2); octabismuth undecacalcium diindium]. The refinements show that the In atoms substitute Bi only at the 8hsite. The refined interatomic distances show an unconventional – for this structure type – bond-length distribution within the anionic sublattice. The latter can be viewed as consisting of isolated Bi3-anions and [In4Bi820-] clusters for the idealized Ca11In2Bi8model. Formal electron counting and first-principle calculations show that the peculiar bonding in this compound drives the system toward an electron-precise state, thereby stabilizing the observed bond-length pattern.
- Research Organization:
- Univ. of Delaware, Newark, DE (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- SC0008885
- OSTI ID:
- 1541443
- Journal Information:
- Acta Crystallographica. Section C, Structural Chemistry (Online), Vol. 74, Issue 3; ISSN 2053-2296
- Publisher:
- International Union of Crystallography
- Country of Publication:
- United States
- Language:
- English
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