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Title: Phonon Influence on Bulk Photovoltaic Effect in the Ferroelectric Semiconductor GeTe

Abstract

Not provided.

Authors:
; ;
Publication Date:
Research Org.:
Univ. of Pennsylvania, Philadelphia, PA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1541336
DOE Contract Number:  
FG02-07ER46431
Resource Type:
Journal Article
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 121; Journal Issue: 1; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
Physics

Citation Formats

Gong, Shi-Jing, Zheng, Fan, and Rappe, Andrew M. Phonon Influence on Bulk Photovoltaic Effect in the Ferroelectric Semiconductor GeTe. United States: N. p., 2018. Web. doi:10.1103/physrevlett.121.017402.
Gong, Shi-Jing, Zheng, Fan, & Rappe, Andrew M. Phonon Influence on Bulk Photovoltaic Effect in the Ferroelectric Semiconductor GeTe. United States. doi:10.1103/physrevlett.121.017402.
Gong, Shi-Jing, Zheng, Fan, and Rappe, Andrew M. Sun . "Phonon Influence on Bulk Photovoltaic Effect in the Ferroelectric Semiconductor GeTe". United States. doi:10.1103/physrevlett.121.017402.
@article{osti_1541336,
title = {Phonon Influence on Bulk Photovoltaic Effect in the Ferroelectric Semiconductor GeTe},
author = {Gong, Shi-Jing and Zheng, Fan and Rappe, Andrew M.},
abstractNote = {Not provided.},
doi = {10.1103/physrevlett.121.017402},
journal = {Physical Review Letters},
issn = {0031-9007},
number = 1,
volume = 121,
place = {United States},
year = {2018},
month = {7}
}

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