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Title: Traditional Semiconductors in the Two-Dimensional Limit

Journal Article · · Physical Review Letters
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  1. Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Physics, Applied Physics & Astronomy
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Interest in two-dimensional materials has exploded in recent years. Not only are they studied due to their novel electronic properties, such as the emergent Dirac fermion in graphene, but also as a new paradigm in which stacking layers of distinct two-dimensional materials may enable different functionality or devices. Here, through first-principles theory, we reveal a large new class of two-dimensional materials which are derived from traditional III-V, II-VI, and I-VII semiconductors. It is found that in the ultrathin limit the great majority of traditional binary semiconductors studied (a series of 28 semiconductors) are not only kinetically stable in a two-dimensional double layer honeycomb structure, but more energetically stable than the truncated wurtzite or zinc-blende structures associated with three dimensional bulk. These findings both greatly increase the landscape of two-dimensional materials and also demonstrate that in the double layer honeycomb form, even ordinary semiconductors, such as GaAs, can exhibit exotic topological properties.

Research Organization:
Rensselaer Polytechnic Inst., Troy, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0002623; AC02-05CH11231; DESC0002623
OSTI ID:
1541285
Alternate ID(s):
OSTI ID: 1422443
Journal Information:
Physical Review Letters, Vol. 120, Issue 8; ISSN 0031-9007
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 44 works
Citation information provided by
Web of Science

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Cited By (4)

A design rule for two-dimensional van der Waals heterostructures with unconventional band alignments journal January 2020
Recovery of the Dirac states of graphene by intercalating two-dimensional traditional semiconductors journal March 2019
Topological phase transition and tunable electronic properties of hydrogenated bismuthene: from single-layer to double-layer journal October 2019
Exploring High Transition Temperature Superconductivity in a Freestanding or SrTiO 3 -Supported CoSb Monolayer journal January 2020

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