skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Electronic fingerprints of Cr and V dopants in the topological insulator Sb 2 Te 3

Abstract

Not provided.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Rensselaer Polytechnic Inst., Troy, NY (United States); Univ. of California, Oakland, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1540969
DOE Contract Number:  
SC0002623; AC02-05CH11231
Resource Type:
Journal Article
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 98; Journal Issue: 11; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
Materials Science; Physics

Citation Formats

Zhang, Wenhan, West, Damien, Lee, Seng Huat, Qiu, Yunsheng, Chang, Cui-Zu, Moodera, Jagadeesh S., Hor, Yew San, Zhang, Shengbai, and Wu, Weida. Electronic fingerprints of Cr and V dopants in the topological insulator Sb2Te3. United States: N. p., 2018. Web. doi:10.1103/physrevb.98.115165.
Zhang, Wenhan, West, Damien, Lee, Seng Huat, Qiu, Yunsheng, Chang, Cui-Zu, Moodera, Jagadeesh S., Hor, Yew San, Zhang, Shengbai, & Wu, Weida. Electronic fingerprints of Cr and V dopants in the topological insulator Sb2Te3. United States. doi:10.1103/physrevb.98.115165.
Zhang, Wenhan, West, Damien, Lee, Seng Huat, Qiu, Yunsheng, Chang, Cui-Zu, Moodera, Jagadeesh S., Hor, Yew San, Zhang, Shengbai, and Wu, Weida. Sat . "Electronic fingerprints of Cr and V dopants in the topological insulator Sb2Te3". United States. doi:10.1103/physrevb.98.115165.
@article{osti_1540969,
title = {Electronic fingerprints of Cr and V dopants in the topological insulator Sb2Te3},
author = {Zhang, Wenhan and West, Damien and Lee, Seng Huat and Qiu, Yunsheng and Chang, Cui-Zu and Moodera, Jagadeesh S. and Hor, Yew San and Zhang, Shengbai and Wu, Weida},
abstractNote = {Not provided.},
doi = {10.1103/physrevb.98.115165},
journal = {Physical Review B},
issn = {2469-9950},
number = 11,
volume = 98,
place = {United States},
year = {2018},
month = {9}
}

Works referenced in this record:

Quantized Anomalous Hall Effect in Magnetic Topological Insulators
journal, June 2010


Topological field theory of time-reversal invariant insulators
journal, November 2008

  • Qi, Xiao-Liang; Hughes, Taylor L.; Zhang, Shou-Cheng
  • Physical Review B, Vol. 78, Issue 19, Article No. 195424
  • DOI: 10.1103/PhysRevB.78.195424

High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
journal, March 2015

  • Chang, Cui-Zu; Zhao, Weiwei; Kim, Duk Y.
  • Nature Materials, Vol. 14, Issue 5
  • DOI: 10.1038/nmat4204

Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
journal, March 2013


Enhancing the Quantum Anomalous Hall Effect by Magnetic Codoping in a Topological Insulator
journal, November 2017


Trajectory of the anomalous Hall effect towards the quantized state in a ferromagnetic topological insulator
journal, August 2014

  • Checkelsky, J. G.; Yoshimi, R.; Tsukazaki, A.
  • Nature Physics, Vol. 10, Issue 10
  • DOI: 10.1038/nphys3053

Scale-Invariant Quantum Anomalous Hall Effect in Magnetic Topological Insulators beyond the Two-Dimensional Limit
journal, September 2014


Onset of the Meissner effect at 65 K in FeSe thin film grown on Nb-doped SrTiO 3 substrate
journal, July 2015


Precise Quantization of the Anomalous Hall Effect near Zero Magnetic Field
journal, May 2015


Thin film dilute ferromagnetic semiconductors Sb 2 x Cr x Te 3 with a Curie temperature up to 190 K
journal, December 2006


Low-temperature ferromagnetic properties of the diluted magnetic semiconductor Sb 2 x Cr x Te 3
journal, March 2005


Ferromagnetism in a new dilute magnetic semiconductor Sb2−x CrxTe3
journal, September 2005

  • Kulbachinskii, V. A.; Tarasov, P. M.; Brück, E.
  • Journal of Experimental and Theoretical Physics, Vol. 101, Issue 3
  • DOI: 10.1134/1.2103222

Diluted magnetic semiconductors based on Sb 2 x V x Te 3 ( 0.01 <~ x <~ 0 . 0 3 )
journal, March 2002


Magnetic and transport properties of the V[sub 2]–VI[sub 3] diluted magnetic semiconductor Sb[sub 2−x]Mn[sub x]Te[sub 3]
journal, January 2003

  • Dyck, J. S.; Švanda, P.; Lošt’ák, P.
  • Journal of Applied Physics, Vol. 94, Issue 12
  • DOI: 10.1063/1.1626803

Thin-film ferromagnetic semiconductors based on Sb2−xVxTe3 with TC of 177K
journal, September 2005

  • Zhou, Zhenhua; Chien, Yi-Jiunn; Uher, Ctirad
  • Applied Physics Letters, Vol. 87, Issue 11
  • DOI: 10.1063/1.2045561

Development of ferromagnetism in the doped topological insulator Bi 2 x Mn x Te 3
journal, May 2010


Magnetic properties of Mn-doped Bi2Te3 and Sb2Te3
journal, June 2004

  • Choi, Jeongyong; Choi, Sungyoul; Choi, Jiyoun
  • physica status solidi (b), Vol. 241, Issue 7
  • DOI: 10.1002/pssb.200304527

Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film
journal, September 2016

  • Li, W.; Claassen, M.; Chang, Cui-Zu
  • Scientific Reports, Vol. 6, Issue 1
  • DOI: 10.1038/srep32732

Carrier-concentration induced ferromagnetism in PbSnMnTe
journal, February 1986


Properties of ferromagnetic III–V semiconductors
journal, October 1999


Electric-field control of ferromagnetism
journal, December 2000

  • Ohno, H.; Chiba, D.; Matsukura, F.
  • Nature, Vol. 408, Issue 6815
  • DOI: 10.1038/35050040

A ten-year perspective on dilute magnetic semiconductors and oxides
journal, November 2010


Ordering mechanism and quantum anomalous Hall effect of magnetically doped topological insulators
journal, October 2017


Stepping Stone Mechanism: Carrier-Free Long-Range Magnetism Mediated by Magnetized Cation States in Quintuple Layer
journal, December 2017


Identifying Magnetic Anisotropy of the Topological Surface State of Cr 0.05 Sb 1.95 Te 3 with Spin-Polarized STM
journal, October 2013


Chemical-Potential-Dependent Gap Opening at the Dirac Surface States of Bi 2 Se 3 Induced by Aggregated Substitutional Cr Atoms
journal, February 2014


Imaging Dirac-mass disorder from magnetic dopant atoms in the ferromagnetic topological insulator Cr x (Bi 0.1 Sb 0.9 ) 2-x Te 3
journal, January 2015

  • Lee, Inhee; Kim, Chung Koo; Lee, Jinho
  • Proceedings of the National Academy of Sciences, Vol. 112, Issue 5
  • DOI: 10.1073/pnas.1424322112

Mass acquisition of Dirac fermions in magnetically doped topological insulator S b 2 T e 3 films
journal, November 2015


Dual nature of magnetic dopants and competing trends in topological insulators
journal, June 2016

  • Sessi, Paolo; Biswas, Rudro R.; Bathon, Thomas
  • Nature Communications, Vol. 7, Issue 1
  • DOI: 10.1038/ncomms12027

Systematics of electronic and magnetic properties in the transition metal doped Sb 2 Te 3 quantum anomalous Hall platform
journal, April 2018


Direct evidence of ferromagnetism in a quantum anomalous Hall system
journal, May 2018


Generalized Gradient Approximation Made Simple
journal, October 1996

  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865

Projector augmented-wave method
journal, December 1994


Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996


From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999


Theory of the scanning tunneling microscope
journal, January 1985


Special points for Brillouin-zone integrations
journal, June 1976

  • Monkhorst, Hendrik J.; Pack, James D.
  • Physical Review B, Vol. 13, Issue 12, p. 5188-5192
  • DOI: 10.1103/PhysRevB.13.5188

Fermi-Level Tuning of Epitaxial Sb 2 Te 3 Thin Films on Graphene by Regulating Intrinsic Defects and Substrate Transfer Doping
journal, February 2012