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Title: Electronic fingerprints of Cr and V dopants in the topological insulator Sb 2 Te 3

Abstract

Not provided.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Rensselaer Polytechnic Inst., Troy, NY (United States); Univ. of California, Oakland, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1540969
DOE Contract Number:  
SC0002623; AC02-05CH11231
Resource Type:
Journal Article
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 98; Journal Issue: 11; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
Materials Science; Physics

Citation Formats

Zhang, Wenhan, West, Damien, Lee, Seng Huat, Qiu, Yunsheng, Chang, Cui-Zu, Moodera, Jagadeesh S., Hor, Yew San, Zhang, Shengbai, and Wu, Weida. Electronic fingerprints of Cr and V dopants in the topological insulator Sb2Te3. United States: N. p., 2018. Web. doi:10.1103/physrevb.98.115165.
Zhang, Wenhan, West, Damien, Lee, Seng Huat, Qiu, Yunsheng, Chang, Cui-Zu, Moodera, Jagadeesh S., Hor, Yew San, Zhang, Shengbai, & Wu, Weida. Electronic fingerprints of Cr and V dopants in the topological insulator Sb2Te3. United States. doi:10.1103/physrevb.98.115165.
Zhang, Wenhan, West, Damien, Lee, Seng Huat, Qiu, Yunsheng, Chang, Cui-Zu, Moodera, Jagadeesh S., Hor, Yew San, Zhang, Shengbai, and Wu, Weida. Sat . "Electronic fingerprints of Cr and V dopants in the topological insulator Sb2Te3". United States. doi:10.1103/physrevb.98.115165.
@article{osti_1540969,
title = {Electronic fingerprints of Cr and V dopants in the topological insulator Sb2Te3},
author = {Zhang, Wenhan and West, Damien and Lee, Seng Huat and Qiu, Yunsheng and Chang, Cui-Zu and Moodera, Jagadeesh S. and Hor, Yew San and Zhang, Shengbai and Wu, Weida},
abstractNote = {Not provided.},
doi = {10.1103/physrevb.98.115165},
journal = {Physical Review B},
issn = {2469-9950},
number = 11,
volume = 98,
place = {United States},
year = {2018},
month = {9}
}