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Title: Role of defects in the carrier-tunable topological-insulator ( Bi 1 x Sb x ) 2 Te 3 thin films

Abstract

Not provided.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Univ. of Illinois at Urbana-Champaign, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1540819
DOE Contract Number:  
SC0014335
Resource Type:
Journal Article
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 97; Journal Issue: 12; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
Materials Science; Physics

Citation Formats

Scipioni, Kane L., Wang, Zhenyu, Maximenko, Yulia, Katmis, Ferhat, Steiner, Charlie, and Madhavan, Vidya. Role of defects in the carrier-tunable topological-insulator ( Bi1−xSbx ) 2Te3 thin films. United States: N. p., 2018. Web. doi:10.1103/physrevb.97.125150.
Scipioni, Kane L., Wang, Zhenyu, Maximenko, Yulia, Katmis, Ferhat, Steiner, Charlie, & Madhavan, Vidya. Role of defects in the carrier-tunable topological-insulator ( Bi1−xSbx ) 2Te3 thin films. United States. doi:10.1103/physrevb.97.125150.
Scipioni, Kane L., Wang, Zhenyu, Maximenko, Yulia, Katmis, Ferhat, Steiner, Charlie, and Madhavan, Vidya. Thu . "Role of defects in the carrier-tunable topological-insulator ( Bi1−xSbx ) 2Te3 thin films". United States. doi:10.1103/physrevb.97.125150.
@article{osti_1540819,
title = {Role of defects in the carrier-tunable topological-insulator ( Bi1−xSbx ) 2Te3 thin films},
author = {Scipioni, Kane L. and Wang, Zhenyu and Maximenko, Yulia and Katmis, Ferhat and Steiner, Charlie and Madhavan, Vidya},
abstractNote = {Not provided.},
doi = {10.1103/physrevb.97.125150},
journal = {Physical Review B},
issn = {2469-9950},
number = 12,
volume = 97,
place = {United States},
year = {2018},
month = {3}
}