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Title: Impact of Silicon Doping on Low-Frequency Charge Noise and Conductance Drift in GaAs/ Al x Ga 1 x As Nanostructures

Abstract

Not provided.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Purdue Univ., West Lafayette, IN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1540703
DOE Contract Number:  
SC0006671
Resource Type:
Journal Article
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 9; Journal Issue: 3; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
Physics

Citation Formats

Fallahi, S., Nakamura, J. R., Gardner, G. C., Yannell, M. M., and Manfra, M. J. Impact of Silicon Doping on Low-Frequency Charge Noise and Conductance Drift in GaAs/AlxGa1−xAs Nanostructures. United States: N. p., 2018. Web. doi:10.1103/physrevapplied.9.034008.
Fallahi, S., Nakamura, J. R., Gardner, G. C., Yannell, M. M., & Manfra, M. J. Impact of Silicon Doping on Low-Frequency Charge Noise and Conductance Drift in GaAs/AlxGa1−xAs Nanostructures. United States. doi:10.1103/physrevapplied.9.034008.
Fallahi, S., Nakamura, J. R., Gardner, G. C., Yannell, M. M., and Manfra, M. J. Thu . "Impact of Silicon Doping on Low-Frequency Charge Noise and Conductance Drift in GaAs/AlxGa1−xAs Nanostructures". United States. doi:10.1103/physrevapplied.9.034008.
@article{osti_1540703,
title = {Impact of Silicon Doping on Low-Frequency Charge Noise and Conductance Drift in GaAs/AlxGa1−xAs Nanostructures},
author = {Fallahi, S. and Nakamura, J. R. and Gardner, G. C. and Yannell, M. M. and Manfra, M. J.},
abstractNote = {Not provided.},
doi = {10.1103/physrevapplied.9.034008},
journal = {Physical Review Applied},
issn = {2331-7019},
number = 3,
volume = 9,
place = {United States},
year = {2018},
month = {3}
}