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Title: Scatterings and Quantum Effects in ( Al , In ) N / GaN Heterostructures for High-Power and High-Frequency Electronics

Abstract

Not provided.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Florida A & M University, Tallahassee, FL (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1540701
DOE Contract Number:  
NA0002630
Resource Type:
Journal Article
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 9; Journal Issue: 2; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
Physics

Citation Formats

Wang, Leizhi, Yin, Ming, Khan, Asif, Muhtadi, Sakib, Asif, Fatima, Choi, Eun Sang, and Datta, Timir. Scatterings and Quantum Effects in (Al,In)N/GaN Heterostructures for High-Power and High-Frequency Electronics. United States: N. p., 2018. Web. doi:10.1103/physrevapplied.9.024006.
Wang, Leizhi, Yin, Ming, Khan, Asif, Muhtadi, Sakib, Asif, Fatima, Choi, Eun Sang, & Datta, Timir. Scatterings and Quantum Effects in (Al,In)N/GaN Heterostructures for High-Power and High-Frequency Electronics. United States. doi:10.1103/physrevapplied.9.024006.
Wang, Leizhi, Yin, Ming, Khan, Asif, Muhtadi, Sakib, Asif, Fatima, Choi, Eun Sang, and Datta, Timir. Thu . "Scatterings and Quantum Effects in (Al,In)N/GaN Heterostructures for High-Power and High-Frequency Electronics". United States. doi:10.1103/physrevapplied.9.024006.
@article{osti_1540701,
title = {Scatterings and Quantum Effects in (Al,In)N/GaN Heterostructures for High-Power and High-Frequency Electronics},
author = {Wang, Leizhi and Yin, Ming and Khan, Asif and Muhtadi, Sakib and Asif, Fatima and Choi, Eun Sang and Datta, Timir},
abstractNote = {Not provided.},
doi = {10.1103/physrevapplied.9.024006},
journal = {Physical Review Applied},
issn = {2331-7019},
number = 2,
volume = 9,
place = {United States},
year = {2018},
month = {2}
}

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