Kinetics of Domain Switching by Mechanical and Electrical Stimulation in Relaxor-Based Ferroelectrics

Chen, Zibin; Hong, Liang; Wang, Feifei; An, Xianghai; Wang, Xiaolin; Ringer, Simon; Chen, Long-Qing; Luo, Haosu; Liao, Xiaozhou

doi:10.1103/physrevapplied.8.064005

Title: Kinetics of Domain Switching by Mechanical and Electrical Stimulation in Relaxor-Based Ferroelectrics

Journal Article · Wed Dec 06 00:00:00 EST 2017 · Physical Review Applied

DOI:https://doi.org/10.1103/physrevapplied.8.064005· OSTI ID:1540697

Chen, Zibin ^[1]; Hong, Liang ^[2]; Wang, Feifei ^[3]; An, Xianghai ^[1]; Wang, Xiaolin ^[4]; Ringer, Simon ^[1]; Chen, Long-Qing ^[2]; Luo, Haosu ^[5]; Liao, Xiaozhou ^[1]

Univ. of Sydney, NSW (Australia)
Pennsylvania State Univ., University Park, PA (United States)
Shanghai Normal Univ. (China)
Univ. of Wollongong, NSW (Australia)
Chinese Academy of Sciences (CAS), Beijing (China)

Ferroelectric materials have been extensively explored for applications in high-density nonvolatile memory devices because of their ferroelectric-ferroelastic domain-switching behavior under electric loading or mechanical stress. However, the existence of ferroelectric and ferroelastic backswitching would cause significant data loss, which affects the reliability of data storage. In this work, we apply in situ transmission electron microscopy and phase-field modeling to explore the unique ferroelastic domain-switching kinetics and the origin of this in relaxor-based Pb(Mg_1/3Nb_2/3)O₃-33%PbTiO₃ single-crystal pillars under electrical and mechanical stimulations. Results showed that the electric-mechanical hysteresis loop shifted for relaxor-based single-crystal pillars because of the low energy levels of domains in the material and the constraint on the pillars, resulting in various mechanically reversible and irreversible domain-switching states. The phenomenon can potentially be used for advanced bit writing and reading in nonvolatile memories, which effectively overcomes the backswitching problem and broadens the types of ferroelectric materials for nonvolatile memory applications.

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Research Organization:: Pennsylvania State Univ., University Park, PA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: FG02-07ER46417

OSTI ID:: 1540697

Alternate ID(s):: OSTI ID: 1411498

Journal Information:: Physical Review Applied, Vol. 8, Issue 6; ISSN 2331-7019

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 12 works

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