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Title: High-Field Magnetoresistance of Organic Semiconductors

Abstract

Not provided.

Authors:
; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Univ. of Utah, Salt Lake City, UT (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1540691
DOE Contract Number:  
SC0000909
Resource Type:
Journal Article
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 10; Journal Issue: 2; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
Physics

Citation Formats

Joshi, G., Teferi, M. Y., Miller, R., Jamali, S., Groesbeck, M., van Tol, J., McLaughlin, R., Vardeny, Z. V., Lupton, J. M., Malissa, H., and Boehme, C. High-Field Magnetoresistance of Organic Semiconductors. United States: N. p., 2018. Web. doi:10.1103/physrevapplied.10.024008.
Joshi, G., Teferi, M. Y., Miller, R., Jamali, S., Groesbeck, M., van Tol, J., McLaughlin, R., Vardeny, Z. V., Lupton, J. M., Malissa, H., & Boehme, C. High-Field Magnetoresistance of Organic Semiconductors. United States. doi:10.1103/physrevapplied.10.024008.
Joshi, G., Teferi, M. Y., Miller, R., Jamali, S., Groesbeck, M., van Tol, J., McLaughlin, R., Vardeny, Z. V., Lupton, J. M., Malissa, H., and Boehme, C. Wed . "High-Field Magnetoresistance of Organic Semiconductors". United States. doi:10.1103/physrevapplied.10.024008.
@article{osti_1540691,
title = {High-Field Magnetoresistance of Organic Semiconductors},
author = {Joshi, G. and Teferi, M. Y. and Miller, R. and Jamali, S. and Groesbeck, M. and van Tol, J. and McLaughlin, R. and Vardeny, Z. V. and Lupton, J. M. and Malissa, H. and Boehme, C.},
abstractNote = {Not provided.},
doi = {10.1103/physrevapplied.10.024008},
journal = {Physical Review Applied},
issn = {2331-7019},
number = 2,
volume = 10,
place = {United States},
year = {2018},
month = {8}
}