Semiconductor quantum dot-sensitized rainbow photocathode for effective photoelectrochemical hydrogen generation

Lv, Hongjin; Wang, Congcong; Li, Guocan; Burke, Rebeckah; Krauss, Todd D.; Gao, Yongli; Eisenberg, Richard

doi:10.1073/pnas.1712325114

Title: Semiconductor quantum dot-sensitized rainbow photocathode for effective photoelectrochemical hydrogen generation

Journal Article · Mon Oct 09 00:00:00 EDT 2017 · Proceedings of the National Academy of Sciences of the United States of America

DOI:https://doi.org/10.1073/pnas.1712325114· OSTI ID:1540267

Lv, Hongjin ^[1]; Wang, Congcong ^[1]; Li, Guocan ^[1]; Burke, Rebeckah ^[1];

^[1]; Gao, Yongli ^[1]; Eisenberg, Richard ^[1]

Univ. of Rochester, NY (United States)

We discuss the fabrication of CdSe quantum dot (QD)-sensitized photocathodes on NiO-coated indium tin oxide (ITO) electrodes and their H₂-generating ability upon light irradiation. A well-established spin-coating approach was used to deposit CdSe QD stock solution onto the surface of NiO/ITO electrodes, thereby leading to the construction of various CdSe QD-sensitized photocathodes. The present report includes the construction of rainbow photocathodes by spin-coating different-sized QDs in a sequentially layered manner, thereby creating an energetically favorable gradient for charge separation. The resulting rainbow photocathodes with forward energetic gradient for charge separation and subsequent electron transfer to a solution-based hydrogen-evolving catalyst (HEC) exhibit good light-harvesting ability and enhanced photoresponses compared with the reverse rainbow photocathodes under white LED light illumination. Under minimally optimized conditions, a photocurrent density of as high as 115 μA•cm^–2and a Faradaic efficiency of 99.5% are achieved, which is among the most capable QD-based photocathode water-splitting systems.

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Research Organization:: Univ. of Rochester, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Chemical Sciences, Geosciences, and Biosciences Division; National Science Foundation (NSF)

Grant/Contract Number:: SC0002106; FG02-09ER16121; CBET-1437656

OSTI ID:: 1540267

Journal Information:: Proceedings of the National Academy of Sciences of the United States of America, Vol. 114, Issue 43; ISSN 0027-8424

Publisher:: National Academy of Sciences, Washington, DC (United States)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 41 works

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semiconductor
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