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Title: Defect-driven extreme magnetoresistance in an I-Mn-V semiconductor

Abstract

Not provided.

Authors:
 [1];  [1];  [2];  [1]
  1. Department of Physics, University of Virginia, Charlottesville, Virginia 22904, USA
  2. Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
Publication Date:
Research Org.:
Univ. of Virginia, Charlottesville, VA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1540232
DOE Contract Number:  
FG02-01ER45927
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 113; Journal Issue: 12; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
Physics

Citation Formats

Yang, Junjie, Wegner, Aaron, Brown, Craig M., and Louca, Despina. Defect-driven extreme magnetoresistance in an I-Mn-V semiconductor. United States: N. p., 2018. Web. doi:10.1063/1.5040364.
Yang, Junjie, Wegner, Aaron, Brown, Craig M., & Louca, Despina. Defect-driven extreme magnetoresistance in an I-Mn-V semiconductor. United States. doi:10.1063/1.5040364.
Yang, Junjie, Wegner, Aaron, Brown, Craig M., and Louca, Despina. Mon . "Defect-driven extreme magnetoresistance in an I-Mn-V semiconductor". United States. doi:10.1063/1.5040364.
@article{osti_1540232,
title = {Defect-driven extreme magnetoresistance in an I-Mn-V semiconductor},
author = {Yang, Junjie and Wegner, Aaron and Brown, Craig M. and Louca, Despina},
abstractNote = {Not provided.},
doi = {10.1063/1.5040364},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 12,
volume = 113,
place = {United States},
year = {2018},
month = {9}
}