Micro-architecture embedding ultra-thin interlayer to bond diamond and silicon via direct fusion

Kim, Jong Cheol; Kim, Jongsik; Xin, Yan; Lee, Jinhyung; Kim, Young-Gyun; Subhash, Ghatu; Singh, Rajiv K.; Arjunan, Arul C.; Lee, Haigun

doi:10.1063/1.5030580

Title: Micro-architecture embedding ultra-thin interlayer to bond diamond and silicon via direct fusion

Journal Article · Mon May 21 00:00:00 EDT 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5030580· OSTI ID:1540211

Kim, Jong Cheol ^[1]; Kim, Jongsik ^[2]; Xin, Yan ^[3]; Lee, Jinhyung ^[4]; Kim, Young-Gyun ^[5]; Subhash, Ghatu ^[6]; Singh, Rajiv K. ^[6]; Arjunan, Arul C. ^[6]; Lee, Haigun ^[5]

Korea Univ., Seoul (South Korea); Univ. of Florida, Gainesville, FL (United States)
Korea Inst. of Science and Technology (KIST), Seoul (South Korea)
Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
SK Hynix Inc., Icheon (South Korea)
Korea Univ., Seoul (South Korea)
Univ. of Florida, Gainesville, FL (United States)

The continuous demand on miniaturized electronic circuits bearing high power density illuminates the need to modify the silicon-on-insulator-based chip architecture. This is due to the low thermal conductivity of the few hundred nanometer-thick insulator present between the silicon substrate and active layers. The thick insulator is notorious for releasing the heat generated from the active layers during the operation of devices, leading to degradation in their performance and thus reducing their lifetime. To avoid the heat accumulation, we propose a method to fabricate the silicon-on-diamond (SOD) microstructure featured by an exceptionally thin silicon oxycarbide interlayer (~3 nm). While exploiting the diamond as an insulator, we employ spark plasma sintering to render the silicon directly fused to the diamond. Importantly, this process can manufacture the SOD microarchitecture via a simple/rapid way and incorporates the ultra-thin interlayer for minute thermal resistance. The approach invented herein expects to minimize the thermal interfacial resistance of the devices and is thus deemed as a breakthrough appealing to the current chip industry.

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Research Organization:: Sinmat, Inc., Gainesville, FL (United States)

Sponsoring Organization:: USDOE Office of Science (SC); National Science Foundation (NSF)

Grant/Contract Number:: SC0006438; SC0007740; DMR-1644779

OSTI ID:: 1540211

Alternate ID(s):: OSTI ID: 1438071

Journal Information:: Applied Physics Letters, Vol. 112, Issue 21; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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