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Title: Relaxation of asymmetric crystallographic tilt: In situ x-ray diffraction studies of epitaxial electrodeposition of bismuth on GaAs (110)

Abstract

Not provided.

Authors:
ORCiD logo [1];  [2];  [3];  [4]; ORCiD logo [1]
  1. School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA; Cornell High Energy Synchrotron Source, Cornell University, Ithaca, New York 14853, USA
  2. Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Ciudad Universitaria de Canto-blanco, 28049 Madrid, Spain
  3. Cornell High Energy Synchrotron Source, Cornell University, Ithaca, New York 14853, USA
  4. Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853, USA
Publication Date:
Research Org.:
Cornell Univ., Ithaca, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1540195
DOE Contract Number:  
SC0001086
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 124; Journal Issue: 3; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
Physics

Citation Formats

Huang, Xin, Plaza, Manuel, Ko, J. Y. Peter, Abruña, Héctor D., and Brock, Joel D. Relaxation of asymmetric crystallographic tilt: In situ x-ray diffraction studies of epitaxial electrodeposition of bismuth on GaAs (110). United States: N. p., 2018. Web. doi:10.1063/1.5026630.
Huang, Xin, Plaza, Manuel, Ko, J. Y. Peter, Abruña, Héctor D., & Brock, Joel D. Relaxation of asymmetric crystallographic tilt: In situ x-ray diffraction studies of epitaxial electrodeposition of bismuth on GaAs (110). United States. doi:10.1063/1.5026630.
Huang, Xin, Plaza, Manuel, Ko, J. Y. Peter, Abruña, Héctor D., and Brock, Joel D. Sat . "Relaxation of asymmetric crystallographic tilt: In situ x-ray diffraction studies of epitaxial electrodeposition of bismuth on GaAs (110)". United States. doi:10.1063/1.5026630.
@article{osti_1540195,
title = {Relaxation of asymmetric crystallographic tilt: In situ x-ray diffraction studies of epitaxial electrodeposition of bismuth on GaAs (110)},
author = {Huang, Xin and Plaza, Manuel and Ko, J. Y. Peter and Abruña, Héctor D. and Brock, Joel D.},
abstractNote = {Not provided.},
doi = {10.1063/1.5026630},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 3,
volume = 124,
place = {United States},
year = {2018},
month = {7}
}