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Title: Low temperature thermoelectric properties of p -type doped single-crystalline SnSe

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.5023125· OSTI ID:1540173
ORCiD logo [1];  [2]; ORCiD logo [3]; ORCiD logo [2];  [4];  [4];  [3];  [4];  [2]
  1. Wuhan Univ. of Technology, Wuhan, Hubei (China). State Key Lab. of Advanced Technology for Materials Synthesis and Processing; Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Physics
  2. Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Physics
  3. Chongqing Univ., Chongqing (China). College of Physics
  4. Wuhan Univ. of Technology, Wuhan, Hubei (China). State Key Lab. of Advanced Technology for Materials Synthesis and Processing

SnSe single crystals have been widely studied lately as a result of their record high ZT and controversial low thermal conductivity. Much research has focused on the high-temperature properties of single crystals and polycrystalline SnSe, but few studies were carried out on the low-temperature properties of doped single-crystalline SnSe. To study the mechanism of the charge carrier and phonon scattering, and to eliminate the ambiguity of the high temperature thermal conductivity measurement, here we performed low temperature transport characterization of Na-doped and Ag-doped single-crystalline SnSe by a longitudinal steady-state technique. The electronic transport property measurements suggest that Na is a more efficient p-type dopant in SnSe than Ag. In the thermal conductivity data, we observe pronounced dielectric peak around 10 K with magnitude dependent on the doping level. In the p-type doped samples, we found that our room temperature lattice thermal conductivities (>1.74 W m-1 K-1) are in general higher than those previously reported. Based on these findings, this work implies that the lattice thermal conductivity values of doped and pure single-crystalline SnSe were underestimated.

Research Organization:
Univ. of Michigan, Ann Arbor, MI (United States)
Sponsoring Organization:
USDOE Office of Policy (OP); USDOE Office of International Affairs (IA)
Grant/Contract Number:
PI0000012; SC-0008574
OSTI ID:
1540173
Alternate ID(s):
OSTI ID: 1431158
Journal Information:
Applied Physics Letters, Vol. 112, Issue 14; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 24 works
Citation information provided by
Web of Science

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Cited By (3)

Advances in thermoelectrics journal April 2018
Lattice thermal conductivity of Bi 2 Te 3 and SnSe using Debye-Callaway and Monte Carlo phonon transport modeling: Application to nanofilms and nanowires journal September 2019
Thermoelectric Figure-of-Merit of Fully Dense Single-Crystalline SnSe journal March 2019

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