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Title: InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion

Abstract

InGaP single-junction solar cells are grown on lattice-matched Ge-on-Si virtual substrates using metal-organic chemical vapor deposition. Optoelectronic simulation results indicate that the optimal collection length for InGaP single-junction solar cells with a carrier lifetime range of 2–5 ns is wider than approximately 1 μm. Electron beam-induced current measurements reveal that the threading dislocation density (TDD) of InGaP solar cells fabricated on Ge and Ge-on-Si substrates is in the range of 10 4–3 × 10 7 cm -2. We demonstrate that the open circuit voltage ( Voc) of InGaP solar cells is not significantly influenced by TDDs less than 2 × 10 6 cm -2. Fabricated InGaP solar cells grown on a Ge-on-Si virtual substrate and a Ge substrate exhibit Voc in the range of 0.96 to 1.43 V under an equivalent illumination in the range of ~0.5 Sun. Finally, the estimated efficiency of the InGaP solar cell fabricated on the Ge-on-Si virtual substrate (Ge substrate) at room temperature for the limited incident spectrum spanning the photon energy range of 1.9–2.4 eV varies from 16.6% to 34.3%.

Authors:
 [1];  [2];  [3];  [4]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Materials Processing Center; Korea Research Inst. of Standards and Science, Daejeon (South Korea). Advanced Instrumentation Inst.
  2. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Materials Science and Engineering
  3. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Materials Processing Center; Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Materials Science and Engineering
  4. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Materials Processing Center; Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Materials Science and Engineering; Korea Research Inst. of Standards and Science, Daejeon (South Korea). Advanced Instrumentation Inst.
Publication Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1540160
Alternate Identifier(s):
OSTI ID: 1422662
Grant/Contract Number:  
AR0000472
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 123; Journal Issue: 8; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; physics

Citation Formats

Kim, T. W., Albert, B. R., Kimerling, L. C., and Michel, J. InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion. United States: N. p., 2018. Web. doi:10.1063/1.5018082.
Kim, T. W., Albert, B. R., Kimerling, L. C., & Michel, J. InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion. United States. doi:10.1063/1.5018082.
Kim, T. W., Albert, B. R., Kimerling, L. C., and Michel, J. Mon . "InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion". United States. doi:10.1063/1.5018082. https://www.osti.gov/servlets/purl/1540160.
@article{osti_1540160,
title = {InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion},
author = {Kim, T. W. and Albert, B. R. and Kimerling, L. C. and Michel, J.},
abstractNote = {InGaP single-junction solar cells are grown on lattice-matched Ge-on-Si virtual substrates using metal-organic chemical vapor deposition. Optoelectronic simulation results indicate that the optimal collection length for InGaP single-junction solar cells with a carrier lifetime range of 2–5 ns is wider than approximately 1 μm. Electron beam-induced current measurements reveal that the threading dislocation density (TDD) of InGaP solar cells fabricated on Ge and Ge-on-Si substrates is in the range of 104–3 × 107 cm-2. We demonstrate that the open circuit voltage (Voc) of InGaP solar cells is not significantly influenced by TDDs less than 2 × 106 cm-2. Fabricated InGaP solar cells grown on a Ge-on-Si virtual substrate and a Ge substrate exhibit Voc in the range of 0.96 to 1.43 V under an equivalent illumination in the range of ~0.5 Sun. Finally, the estimated efficiency of the InGaP solar cell fabricated on the Ge-on-Si virtual substrate (Ge substrate) at room temperature for the limited incident spectrum spanning the photon energy range of 1.9–2.4 eV varies from 16.6% to 34.3%.},
doi = {10.1063/1.5018082},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 8,
volume = 123,
place = {United States},
year = {2018},
month = {2}
}

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