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Title: Impact of thermally dead volume on phonon conduction along silicon nanoladders

Abstract

Silicon nanoladders show that thermally dead volume minimally impacts on the ballistic effects.

Authors:
ORCiD logo [1];  [2];  [3];  [1];  [4];  [5];  [6];  [7]; ORCiD logo [8];  [1];  [3];  [1]
  1. Department of Mechanical Engineering; Stanford University; Stanford; USA
  2. Department of Electrical Engineering; Stanford University; Stanford; USA
  3. Department of Mechanical Engineering; Massachusetts Institute of Technology; Cambridge; USA
  4. Department of Mechanical Engineering; Stanford University; Stanford; USA; Department of Materials Science and Engineering
  5. Department of Mechanical Engineering; Stanford University; Stanford; USA; Department of Electrical Engineering
  6. Geballe Laboratory for Advanced Materials; Stanford University; Stanford; USA
  7. Department of Mechanical Engineering; Hanyang University; Seoul; South Korea
  8. Department of Electrical and Computer Engineering; The University of Texas at San Antonio; San Antonio; USA
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1540060
DOE Contract Number:  
SC0001299
Resource Type:
Journal Article
Journal Name:
Nanoscale
Additional Journal Information:
Journal Volume: 10; Journal Issue: 23; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
Chemistry; Science & Technology - Other Topics; Materials Science; Physics

Citation Formats

Park, Woosung, Sohn, Joon, Romano, Giuseppe, Kodama, Takashi, Sood, Aditya, Katz, Joseph S., Kim, Brian S. Y., So, Hongyun, Ahn, Ethan C., Asheghi, Mehdi, Kolpak, Alexie M., and Goodson, Kenneth E. Impact of thermally dead volume on phonon conduction along silicon nanoladders. United States: N. p., 2018. Web. doi:10.1039/c8nr01788c.
Park, Woosung, Sohn, Joon, Romano, Giuseppe, Kodama, Takashi, Sood, Aditya, Katz, Joseph S., Kim, Brian S. Y., So, Hongyun, Ahn, Ethan C., Asheghi, Mehdi, Kolpak, Alexie M., & Goodson, Kenneth E. Impact of thermally dead volume on phonon conduction along silicon nanoladders. United States. doi:10.1039/c8nr01788c.
Park, Woosung, Sohn, Joon, Romano, Giuseppe, Kodama, Takashi, Sood, Aditya, Katz, Joseph S., Kim, Brian S. Y., So, Hongyun, Ahn, Ethan C., Asheghi, Mehdi, Kolpak, Alexie M., and Goodson, Kenneth E. Mon . "Impact of thermally dead volume on phonon conduction along silicon nanoladders". United States. doi:10.1039/c8nr01788c.
@article{osti_1540060,
title = {Impact of thermally dead volume on phonon conduction along silicon nanoladders},
author = {Park, Woosung and Sohn, Joon and Romano, Giuseppe and Kodama, Takashi and Sood, Aditya and Katz, Joseph S. and Kim, Brian S. Y. and So, Hongyun and Ahn, Ethan C. and Asheghi, Mehdi and Kolpak, Alexie M. and Goodson, Kenneth E.},
abstractNote = {Silicon nanoladders show that thermally dead volume minimally impacts on the ballistic effects.},
doi = {10.1039/c8nr01788c},
journal = {Nanoscale},
issn = {2040-3364},
number = 23,
volume = 10,
place = {United States},
year = {2018},
month = {1}
}

Works referenced in this record:

Thermal conductivity of individual silicon nanowires
journal, October 2003

  • Li, Deyu; Wu, Yiying; Kim, Philip
  • Applied Physics Letters, Vol. 83, Issue 14, p. 2934-2936
  • DOI: 10.1063/1.1616981

Enhanced thermoelectric performance of rough silicon nanowires
journal, January 2008

  • Hochbaum, Allon I.; Chen, Renkun; Delgado, Raul Diaz
  • Nature, Vol. 451, Issue 7175, p. 163-167
  • DOI: 10.1038/nature06381