Impact of thermally dead volume on phonon conduction along silicon nanoladders

Park, Woosung; Sohn, Joon; Romano, Giuseppe; Kodama, Takashi; Sood, Aditya; Katz, Joseph S.; Kim, Brian S.  Y.; So, Hongyun; Ahn, Ethan C.; Asheghi, Mehdi; Kolpak, Alexie M.; Goodson, Kenneth E.

doi:10.1039/c8nr01788c

Impact of thermally dead volume on phonon conduction along silicon nanoladders

Journal Article · 01 January 2018 · Nanoscale

DOI:https://doi.org/10.1039/c8nr01788c· OSTI ID:1540060

^[1]; Sohn, Joon ^[2]; Romano, Giuseppe ^[3]; Kodama, Takashi ^[1]; Sood, Aditya ^[4]; Katz, Joseph S. ^[5]; Kim, Brian S. Y. ^[6]; So, Hongyun ^[7]; ^[8]; Asheghi, Mehdi ^[1]; Kolpak, Alexie M. ^[3]; Goodson, Kenneth E. ^[1]

Department of Mechanical Engineering; Stanford University; Stanford; USA
Department of Electrical Engineering; Stanford University; Stanford; USA
Department of Mechanical Engineering; Massachusetts Institute of Technology; Cambridge; USA
Department of Mechanical Engineering; Stanford University; Stanford; USA; Department of Materials Science and Engineering
Department of Mechanical Engineering; Stanford University; Stanford; USA; Department of Electrical Engineering
Geballe Laboratory for Advanced Materials; Stanford University; Stanford; USA
Department of Mechanical Engineering; Hanyang University; Seoul; South Korea
Department of Electrical and Computer Engineering; The University of Texas at San Antonio; San Antonio; USA

Silicon nanoladders show that thermally dead volume minimally impacts on the ballistic effects.

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0001299

OSTI ID:: 1540060

Journal Information:: Nanoscale, Vol. 10, Issue 23; ISSN 2040-3364

Publisher:: Royal Society of Chemistry

Country of Publication:: United States

Language:: English

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