Native defects and impurity band behavior in half-Heusler thermoelectric NbFeSb

Tian, Yefan; Zhu, Hangtian; Ren, Wuyang; Ghassemi, Nader; Conant, Emily; Wang, Zhiming; Ren, Zhifeng; Ross, Joseph H.

doi:10.1039/c8cp04287j

Title: Native defects and impurity band behavior in half-Heusler thermoelectric NbFeSb

Journal Article · Mon Jan 01 00:00:00 EST 2018 · Physical Chemistry Chemical Physics. PCCP

DOI:https://doi.org/10.1039/c8cp04287j· OSTI ID:1540022

^[1]; Zhu, Hangtian ^[2]; Ren, Wuyang ^[3]; Ghassemi, Nader ^[1]; Conant, Emily ^[1]; Wang, Zhiming ^[4]; Ren, Zhifeng ^[5]; Ross, Joseph H. ^[6]

Department of Physics and Astronomy, Texas A&M University; College Station; USA
Department of Physics, University of Houston; Houston; USA
Department of Physics, University of Houston; Houston; USA; Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China; Chengdu 610054
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China; Chengdu 610054; China
Department of Physics, University of Houston; Houston; USA; Texas Center for Superconductivity at the University of Houston, University of Houston; Houston
Department of Physics and Astronomy, Texas A&M University; College Station; USA; Department of Materials Science and Engineering, Texas A&M University; College Station

Native defects are identified that dominate the electronic behavior and generate impurity-band states in the promising thermoelectric NbFeSb.

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Research Organization:: Univ. of Houston, TX (United States); Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0010831; AC02-06CH11357

OSTI ID:: 1540022

Journal Information:: Physical Chemistry Chemical Physics. PCCP, Vol. 20, Issue 34; ISSN 1463-9076

Publisher:: Royal Society of Chemistry

Country of Publication:: United States

Language:: English

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