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Beating the thermodynamic limit with photo-activation of n-doping in organic semiconductors

Journal Article · · Nature Materials
DOI:https://doi.org/10.1038/nmat5027· OSTI ID:1539786

Not provided.

Research Organization:
Princeton Univ., NJ (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
DOE Contract Number:
EE0006672; SC0012458
OSTI ID:
1539786
Journal Information:
Nature Materials, Vol. 16, Issue 12; ISSN 1476-1122
Publisher:
Springer Nature - Nature Publishing Group
Country of Publication:
United States
Language:
English

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Efficient ITO-free organic light-emitting devices with dual-functional PSS-rich PEDOT:PSS electrode by enhancing carrier balance journal January 2019
Self-doping n-type polymer as a cathode interface layer enables efficient organic solar cells by increasing built-in electric field and boosting interface contact journal January 2019
Enhancement in electron transport and exciton confinement in OLEDs: role of n-type doping and electron blocking layers journal April 2019
Ferromagnetism regulated by edged cutting and optical identification in monolayer PtSe 2 nanoribbons journal May 2018
Enhanced electron current in inverted organic light emitting diodes with an n -doped electron transport layer adopting high and low doping levels journal January 2018
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