Enhanced Light Emission from the Ridge of Two-Dimensional InSe Flakes

Li, Yang; Wang, Tianmeng; Wang, Han; Li, Zhipeng; Chen, Yanwen; West, Damien; Sankar, Raman; Ulaganathan, Rajesh K.; Chou, Fangcheng; Wetzel, Christian; Xu, Cheng-Yan; Zhang, Shengbai; Shi, Su-Fei

doi:10.1021/acs.nanolett.8b01940

Title: Enhanced Light Emission from the Ridge of Two-Dimensional InSe Flakes

Journal Article · Thu Jul 19 00:00:00 EDT 2018 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.8b01940· OSTI ID:1539426

Li, Yang ^[1]; Wang, Tianmeng ^[2]; Wang, Han ^[2]; Li, Zhipeng ^[3]; Chen, Yanwen ^[2]; West, Damien ^[2];

^[4];

^[4]; Chou, Fangcheng ^[4]; Wetzel, Christian ^[2];

^[5]; Zhang, Shengbai ^[2];

^[2]

Rensselaer Polytechnic Institute, Troy, NY (United States); Harbin Institute of Technology (China)
Rensselaer Polytechnic Institute, Troy, NY (United States)
Rensselaer Polytechnic Institute, Troy, NY (United States); Shanghai Jiao Tong University (China)
Institute of Physics, Academia Sinica, Taipei (Taiwan); National Taiwan University, Taipei (Taiwan)
Harbin Institute of Technology (China)

InSe, a newly rediscovered two-dimensional (2D) semiconductor, possesses superior electrical and optical properties as a direct-band-gap semiconductor with high mobility from bulk to atomically thin layers and is drastically different from transition-metal dichalcogenides, in which the direct band gap only exists at the single-layer limit. However, absorption in InSe is mostly dominated by an out-of-plane dipole contribution, which results in the limited absorption of normally incident light that can only excite the in-plane dipole at resonance. To address this challenge, we have explored a unique geometric ridge state of the 2D flake without compromising the sample quality. Here we observed the enhanced absorption at the ridge over a broad range of excitation frequencies from photocurrent and photoluminescence (PL) measurements. In addition, we have discovered new PL peaks at low temperatures due to defect states on the ridge, which can be as much as ~60 times stronger than the intrinsic PL peak of InSe. Interestingly, the PL of the defects is highly tunable through an external electrical field, which can be attributed to the Stark effect of the localized defects. InSe ridges thus provide new avenues for manipulating light–matter interactions and defect engineering that are vitally crucial for novel optoelectronic devices based on 2D semiconductors.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Rensselaer Polytechnic Inst., Troy, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC); US Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF); National Natural Science Foundation of China (NSFC)

Grant/Contract Number:: SC0002623; AC02-05CH11231; FA9550-18-1-0312; EFMA-1542798; 51572057

OSTI ID:: 1539426

Journal Information:: Nano Letters, Vol. 18, Issue 8; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 42 works

Citation information provided by
Web of Science

References (44)

Coupled Spin and Valley Physics in Monolayers of ${MoS}_{2}$ and Other Group-VI Dichalcogenides Xiao, Di; Liu, Gui-Bin; Feng, Wanxiang Physical Review Letters, Vol. 108, Issue 19 https://doi.org/10.1103/PhysRevLett.108.196802	journal	May 2012
Quantum-confined Stark effects in semiconductor quantum dots Wen, G. W.; Lin, J. Y.; Jiang, H. X. Physical Review B, Vol. 52, Issue 8 https://doi.org/10.1103/PhysRevB.52.5913	journal	August 1995
High Performance and Bendable Few-Layered InSe Photodetectors with Broad Spectral Response Tamalampudi, Srinivasa Reddy; Lu, Yi-Ying; Kumar U., Rajesh Nano Letters, Vol. 14, Issue 5 https://doi.org/10.1021/nl500817g	journal	April 2014
The resonant nature of the direct exciton in InSe Cingolani, A.; Cingolani, R.; Ferrara, M. Solid State Communications, Vol. 57, Issue 1 https://doi.org/10.1016/0038-1098(86)90671-X	journal	January 1986
Two-dimensional semiconductors for transistors Chhowalla, Manish; Jena, Debdeep; Zhang, Hua Nature Reviews Materials, Vol. 1, Issue 11 https://doi.org/10.1038/natrevmats.2016.52	journal	August 2016
Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics Jariwala, Deep; Davoyan, Artur R.; Tagliabue, Giulia Nano Letters, Vol. 16, Issue 9 https://doi.org/10.1021/acs.nanolett.6b01914	journal	August 2016
High mobility ambipolar MoS ₂ field-effect transistors: Substrate and dielectric effects Bao, Wenzhong; Cai, Xinghan; Kim, Dohun Applied Physics Letters, Vol. 102, Issue 4 https://doi.org/10.1063/1.4789365	journal	January 2013
Quantum-Confined Stark Effect in Single CdSe Nanocrystallite Quantum Dots Empedocles, S. A. Science, Vol. 278, Issue 5346 https://doi.org/10.1126/science.278.5346.2114	journal	December 1997
Emerging Photoluminescence in Monolayer MoS₂ Splendiani, Andrea; Sun, Liang; Zhang, Yuanbo Nano Letters, Vol. 10, Issue 4, p. 1271-1275 https://doi.org/10.1021/nl903868w	journal	April 2010
The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals Mudd, G. W.; Molas, M. R.; Chen, X. Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep39619	journal	December 2016
Spatially Resolved Plasmonically Enhanced Photocurrent from Au Nanoparticles on a Si Nanowire Hyun, Jerome K.; Lauhon, Lincoln J. Nano Letters, Vol. 11, Issue 7 https://doi.org/10.1021/nl201021k	journal	July 2011
Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials Bernardi, Marco; Palummo, Maurizia; Grossman, Jeffrey C. Nano Letters, Vol. 13, Issue 8, p. 3664-3670 https://doi.org/10.1021/nl401544y	journal	July 2013
Quantitative model for photocurrent spectroscopy of quantum-well diodes including transit-time and background-doping effects Leavitt, R. P.; Bradshaw, J. L.; Pham, J. T. Journal of Applied Physics, Vol. 75, Issue 4 https://doi.org/10.1063/1.356284	journal	February 1994
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712 https://doi.org/10.1038/nnano.2012.193	journal	November 2012
Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides Mak, Kin Fai; Shan, Jie Nature Photonics, Vol. 10, Issue 4 https://doi.org/10.1038/nphoton.2015.282	journal	March 2016
Stark Shift Control of Single Optical Centers in Diamond Tamarat, Ph.; Gaebel, T.; Rabeau, J. R. Physical Review Letters, Vol. 97, Issue 8 https://doi.org/10.1103/PhysRevLett.97.083002	journal	August 2006
Gate Tuning of High‐Performance InSe‐Based Photodetectors Using Graphene Electrodes Luo, Wengang; Cao, Yufei; Hu, Pingan Advanced Optical Materials, Vol. 3, Issue 10 https://doi.org/10.1002/adom.201500190	journal	June 2015
Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement Mudd, Garry W.; Svatek, Simon A.; Ren, Tianhang Advanced Materials, Vol. 25, Issue 40 https://doi.org/10.1002/adma.201302616	journal	August 2013
Optical anisotropy in layer compounds Liang, W. Y. Journal of Physics C: Solid State Physics, Vol. 6, Issue 3 https://doi.org/10.1088/0022-3719/6/3/018	journal	February 1973
Low-temperature exciton absorption in InSe under pressure Goi, A. R.; Cantarero, A.; Schwarz, U. Physical Review B, Vol. 45, Issue 8 https://doi.org/10.1103/PhysRevB.45.4221	journal	February 1992
Electronic structure, optical properties, and lattice dynamics in atomically thin indium selenide flakes Sánchez-Royo, Juan F.; Muñoz-Matutano, Guillermo; Brotons-Gisbert, Mauro Nano Research, Vol. 7, Issue 10 https://doi.org/10.1007/s12274-014-0516-x	journal	August 2014
Quantum-confined Stark effect in very small semiconductor crystallites Hache, F.; Ricard, D.; Flytzanis, C. Applied Physics Letters, Vol. 55, Issue 15 https://doi.org/10.1063/1.102257	journal	October 1989
Mechanical properties of layered InSe and GaSe single crystals Mosca, D. H.; Mattoso, N.; Lepienski, C. M. Journal of Applied Physics, Vol. 91, Issue 1 https://doi.org/10.1063/1.1423391	journal	January 2002
Ultrasensitive tunability of the direct bandgap of 2D InSe flakes via strain engineering Li, Yang; Wang, Tianmeng; Wu, Meng 2D Materials, Vol. 5, Issue 2 https://doi.org/10.1088/2053-1583/aaa6eb	journal	January 2018
Stark Effect Spectroscopy of Mono- and Few-Layer MoS ₂ Klein, J.; Wierzbowski, J.; Regler, A. Nano Letters, Vol. 16, Issue 3 https://doi.org/10.1021/acs.nanolett.5b03954	journal	February 2016
Spin splitting in 2D monochalcogenide semiconductors Do, Dat T.; Mahanti, Subhendra D.; Lai, Chih Wei Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep17044	journal	November 2015
Optical anisotropy in GaSe Liang, W. Y. Journal of Physics C: Solid State Physics, Vol. 8, Issue 11 https://doi.org/10.1088/0022-3719/8/11/029	journal	June 1975
Quantum-Confined Stark Effect in a MoS ₂ Monolayer van der Waals Heterostructure Roch, Jonas G.; Leisgang, Nadine; Froehlicher, Guillaume Nano Letters, Vol. 18, Issue 2 https://doi.org/10.1021/acs.nanolett.7b04553	journal	January 2018
Atomically Thin ${MoS}_{2}$ A New Direct-Gap Semiconductor Mak, Kin Fai; Lee, Changgu; Hone, James Physical Review Letters, Vol. 105, Issue 13, Article No.136805 https://doi.org/10.1103/PhysRevLett.105.136805	journal	September 2010
Tightly bound trions in monolayer MoS2 Mak, Kin Fai; He, Keliang; Lee, Changgu Nature Materials, Vol. 12, Issue 3 https://doi.org/10.1038/nmat3505	journal	December 2012
Excitonic photoluminescence properties of InSe Imai, Kazuaki Journal of Luminescence, Vol. 43, Issue 2 https://doi.org/10.1016/0022-2313(89)90034-3	journal	April 1989
Local Strain Engineering in Atomically Thin MoS ₂ Castellanos-Gomez, Andres; Roldán, Rafael; Cappelluti, Emmanuele Nano Letters, Vol. 13, Issue 11 https://doi.org/10.1021/nl402875m	journal	October 2013
Absorption of Light in a Single-Nanowire Silicon Solar Cell Decorated with an Octahedral Silver Nanocrystal Brittman, Sarah; Gao, Hanwei; Garnett, Erik C. Nano Letters, Vol. 11, Issue 12 https://doi.org/10.1021/nl2023806	journal	December 2011
Evolution of the Electronic Band Structure and Efficient Photo-Detection in Atomic Layers of InSe Lei, Sidong; Ge, Liehui; Najmaei, Sina ACS Nano, Vol. 8, Issue 2 https://doi.org/10.1021/nn405036u	journal	January 2014
Electrical control of neutral and charged excitons in a monolayer semiconductor Ross, Jason S.; Wu, Sanfeng; Yu, Hongyi Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms2498	journal	February 2013
Linearly Polarized Remote-Edge Luminescence in GaSe Nanoslabs Tang, Yanhao; Xie, Wei; Mandal, Krishna C. Physical Review Applied, Vol. 4, Issue 3 https://doi.org/10.1103/PhysRevApplied.4.034008	journal	September 2015
Valleytronics in 2D materials Schaibley, John R.; Yu, Hongyi; Clark, Genevieve Nature Reviews Materials, Vol. 1, Issue 11 https://doi.org/10.1038/natrevmats.2016.55	journal	August 2016
Intrinsic Electron Mobility Exceeding 10 ³ cm ² /(V s) in Multilayer InSe FETs Sucharitakul, Sukrit; Goble, Nicholas J.; Kumar, U. Rajesh Nano Letters, Vol. 15, Issue 6 https://doi.org/10.1021/acs.nanolett.5b00493	journal	May 2015
Nanotexturing To Enhance Photoluminescent Response of Atomically Thin Indium Selenide with Highly Tunable Band Gap Brotons-Gisbert, Mauro; Andres-Penares, Daniel; Suh, Joonki Nano Letters, Vol. 16, Issue 5 https://doi.org/10.1021/acs.nanolett.6b00689	journal	April 2016
Single-layer MoS₂ transistors Radisavljevic, B.; Radenovic, A.; Brivio, J. Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150 https://doi.org/10.1038/nnano.2010.279	journal	January 2011
Control of valley polarization in monolayer MoS2 by optical helicity Mak, Kin Fai; He, Keliang; Shan, Jie Nature Nanotechnology, Vol. 7, Issue 8 https://doi.org/10.1038/nnano.2012.96	journal	June 2012
High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe Bandurin, Denis A.; Tyurnina, Anastasia V.; Yu, Geliang L. Nature Nanotechnology, Vol. 12, Issue 3 https://doi.org/10.1038/nnano.2016.242	journal	November 2016
Temperature dependence of the energy gap in semiconductors Varshni, Y. P. Physica, Vol. 34, Issue 1 https://doi.org/10.1016/0031-8914(67)90062-6	journal	January 1967
Exciton transitions from spin-orbit split off valence bands in layer compound InSe Kuroda, Noritaka; Munakata, Ichiro; Nishina, Yuichiro Solid State Communications, Vol. 33, Issue 6 https://doi.org/10.1016/0038-1098(80)90753-X	journal	February 1980

Cited By (2)

Manipulating Optical Absorption of Indium Selenide Using Plasmonic Nanoparticles Liu, Xiaoyu; Zhang, Yifei; Feng, Huayu ACS Omega, Vol. 5, Issue 6 https://doi.org/10.1021/acsomega.9b03949	journal	February 2020
Out-of-plane orientation of luminescent excitons in two-dimensional indium selenide Brotons-Gisbert, Mauro; Proux, Raphaël; Picard, Raphaël Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-11920-4	journal	September 2019

Similar Records

Ultrasensitive tunability of the direct bandgap of 2D [Twp-dimensional] InSe flakes via strain engineering

Journal Article · Mon Jan 29 00:00:00 EST 2018 · 2D Materials · OSTI ID:1539426

Li, Yang; Wang, Tianmeng; Wu, Meng; +9 more

Layer-dependent optically induced spin polarization in InSe

Journal Article · Wed Mar 15 00:00:00 EDT 2023 · Physical Review. B · OSTI ID:1539426

Nelson, Jovan; Stanev, Teodor K.; Lebedev, Dmitry; +9 more

Spatially Resolved Persistent Photoconductivity in MoS2–WS2 Lateral Heterostructures

Journal Article · Mon Oct 12 00:00:00 EDT 2020 · ACS Nano · OSTI ID:1539426

Berweger, Samuel; Zhang, Hanyu; Sahoo, Prasana K.; +7 more

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
indium selenide
ridges
selection rules
defect emission
stark effect

Title: Enhanced Light Emission from the Ridge of Two-Dimensional InSe Flakes

Citation Formats

References (44)

Cited By (2)

Similar Records

Related Subjects