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Title: Highly Localized Charge Transfer Excitons in Metal Oxide Semiconductors

Abstract

Not provided.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [1]; ORCiD logo [1]
  1. Department of Chemistry and Biochemistry, The Ohio State University, Columbus, Ohio 43210, United States
Publication Date:
Research Org.:
The Ohio State Univ., Columbus, OH (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1539396
DOE Contract Number:  
SC0014051
Resource Type:
Journal Article
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 18; Journal Issue: 2; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
Chemistry; Science & Technology - Other Topics; Materials Science; Physics

Citation Formats

Biswas, Somnath, Husek, Jakub, Londo, Stephen, and Baker, L. Robert. Highly Localized Charge Transfer Excitons in Metal Oxide Semiconductors. United States: N. p., 2018. Web. doi:10.1021/acs.nanolett.7b04818.
Biswas, Somnath, Husek, Jakub, Londo, Stephen, & Baker, L. Robert. Highly Localized Charge Transfer Excitons in Metal Oxide Semiconductors. United States. doi:10.1021/acs.nanolett.7b04818.
Biswas, Somnath, Husek, Jakub, Londo, Stephen, and Baker, L. Robert. Mon . "Highly Localized Charge Transfer Excitons in Metal Oxide Semiconductors". United States. doi:10.1021/acs.nanolett.7b04818.
@article{osti_1539396,
title = {Highly Localized Charge Transfer Excitons in Metal Oxide Semiconductors},
author = {Biswas, Somnath and Husek, Jakub and Londo, Stephen and Baker, L. Robert},
abstractNote = {Not provided.},
doi = {10.1021/acs.nanolett.7b04818},
journal = {Nano Letters},
issn = {1530-6984},
number = 2,
volume = 18,
place = {United States},
year = {2018},
month = {1}
}