Highly Contrasting Static Charging and Bias Stress Effects in Pentacene Transistors with Polystyrene Heterostructures Incorporating Oxidizable N , N '-Bis(4-methoxyphenyl)aniline Side Chains as Gate Dielectrics

Zhang, Qingyang; Kale, Tejaswini S.; Plunkett, Evan; Shi, Wei; Kirby, B. J.; Reich, Daniel H.; Katz, Howard E.

doi:10.1021/acs.macromol.8b00596

Title: Highly Contrasting Static Charging and Bias Stress Effects in Pentacene Transistors with Polystyrene Heterostructures Incorporating Oxidizable N , N '-Bis(4-methoxyphenyl)aniline Side Chains as Gate Dielectrics

Journal Article · Mon Jul 30 00:00:00 EDT 2018 · Macromolecules

DOI:https://doi.org/10.1021/acs.macromol.8b00596· OSTI ID:1539374

Zhang, Qingyang; Kale, Tejaswini S.; Plunkett, Evan; Shi, Wei; Kirby, B. J. ^[1]; Reich, Daniel H.;

Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-6102, United States

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Research Organization:: Johns Hopkins Univ., Baltimore, MD (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: FG02-07ER46465

OSTI ID:: 1539374

Journal Information:: Macromolecules, Vol. 51, Issue 15; ISSN 0024-9297

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

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Pentafluorosulfanylated polymers as electrets in nonvolatile organic field-effect transistor memory devices Zhang, Guoxian; Lee, Yu-Jung; Gautam, Prabhat Journal of Materials Chemistry C, Vol. 7, Issue 26 https://doi.org/10.1039/c9tc00756c	journal	January 2019

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