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Title: Highly Contrasting Static Charging and Bias Stress Effects in Pentacene Transistors with Polystyrene Heterostructures Incorporating Oxidizable N , N '-Bis(4-methoxyphenyl)aniline Side Chains as Gate Dielectrics

Abstract

Not provided.

Authors:
; ; ; ;  [1]; ; ORCiD logo
  1. Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-6102, United States
Publication Date:
Research Org.:
Johns Hopkins Univ., Baltimore, MD (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1539374
DOE Contract Number:  
FG02-07ER46465
Resource Type:
Journal Article
Journal Name:
Macromolecules
Additional Journal Information:
Journal Volume: 51; Journal Issue: 15; Journal ID: ISSN 0024-9297
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
Polymer Science

Citation Formats

Zhang, Qingyang, Kale, Tejaswini S., Plunkett, Evan, Shi, Wei, Kirby, B. J., Reich, Daniel H., and Katz, Howard E. Highly Contrasting Static Charging and Bias Stress Effects in Pentacene Transistors with Polystyrene Heterostructures Incorporating Oxidizable N , N '-Bis(4-methoxyphenyl)aniline Side Chains as Gate Dielectrics. United States: N. p., 2018. Web. doi:10.1021/acs.macromol.8b00596.
Zhang, Qingyang, Kale, Tejaswini S., Plunkett, Evan, Shi, Wei, Kirby, B. J., Reich, Daniel H., & Katz, Howard E. Highly Contrasting Static Charging and Bias Stress Effects in Pentacene Transistors with Polystyrene Heterostructures Incorporating Oxidizable N , N '-Bis(4-methoxyphenyl)aniline Side Chains as Gate Dielectrics. United States. doi:10.1021/acs.macromol.8b00596.
Zhang, Qingyang, Kale, Tejaswini S., Plunkett, Evan, Shi, Wei, Kirby, B. J., Reich, Daniel H., and Katz, Howard E. Mon . "Highly Contrasting Static Charging and Bias Stress Effects in Pentacene Transistors with Polystyrene Heterostructures Incorporating Oxidizable N , N '-Bis(4-methoxyphenyl)aniline Side Chains as Gate Dielectrics". United States. doi:10.1021/acs.macromol.8b00596.
@article{osti_1539374,
title = {Highly Contrasting Static Charging and Bias Stress Effects in Pentacene Transistors with Polystyrene Heterostructures Incorporating Oxidizable N , N '-Bis(4-methoxyphenyl)aniline Side Chains as Gate Dielectrics},
author = {Zhang, Qingyang and Kale, Tejaswini S. and Plunkett, Evan and Shi, Wei and Kirby, B. J. and Reich, Daniel H. and Katz, Howard E.},
abstractNote = {Not provided.},
doi = {10.1021/acs.macromol.8b00596},
journal = {Macromolecules},
issn = {0024-9297},
number = 15,
volume = 51,
place = {United States},
year = {2018},
month = {7}
}

Works referencing / citing this record:

Pentafluorosulfanylated polymers as electrets in nonvolatile organic field-effect transistor memory devices
journal, January 2019

  • Zhang, Guoxian; Lee, Yu-Jung; Gautam, Prabhat
  • Journal of Materials Chemistry C, Vol. 7, Issue 26
  • DOI: 10.1039/c9tc00756c