Stability, Electronic and Optical Properties of M 4 M'X 4 (M = Ga or In, M' = Si, Ge, or Sn, X = Chalcogen) Photovoltaic Absorbers

Meng, Weiwei; Wang, Xiaoming; Yan, Yanfa; Wang, Jianbo

doi:10.1021/acs.jpcc.8b03706

Stability, Electronic and Optical Properties of M ₄ M'X ₄ (M = Ga or In, M' = Si, Ge, or Sn, X = Chalcogen) Photovoltaic Absorbers

Journal Article · 25 April 2018 · Journal of Physical Chemistry. C

DOI:https://doi.org/10.1021/acs.jpcc.8b03706· OSTI ID:1539271

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School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China; Department of Physics and Astronomy, Wright Center for Photovoltaic Innovation and Commercialization, The University of Toledo, Toledo, Ohio 43606, United States
Department of Physics and Astronomy, Wright Center for Photovoltaic Innovation and Commercialization, The University of Toledo, Toledo, Ohio 43606, United States
School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China; Science and Technology of High Strength Structural Materials Laboratory, Central South University, Changsha 410083, China

Not provided.

Research Organization:: Duke Univ., Durham, NC (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

DOE Contract Number:: EE0006712

OSTI ID:: 1539271

Journal Information:: Journal of Physical Chemistry. C, Vol. 122, Issue 19; ISSN 1932-7447

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

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