Air-Stable Direct Bandgap Perovskite Semiconductors: All-Inorganic Tin-Based Heteroleptic Halides A x SnCl y I z (A = Cs, Rb)

Li, Jiangwei; Stoumpos, Constantinos C.; Trimarchi, Giancarlo G.; Chung, In; Mao, Lingling; Chen, Michelle; Wasielewski, Michael R.; Wang, Liduo; Kanatzidis, Mercouri G.

doi:10.1021/acs.chemmater.8b02232

Air-Stable Direct Bandgap Perovskite Semiconductors: All-Inorganic Tin-Based Heteroleptic Halides A _x SnCl _y I _z (A = Cs, Rb)

Journal Article · 20 June 2018 · Chemistry of Materials

DOI:https://doi.org/10.1021/acs.chemmater.8b02232· OSTI ID:1539017

^[1]; ^[2]; Trimarchi, Giancarlo G. ^[2]; Chung, In ^[2]; ^[2]; Chen, Michelle ^[2]; ^[2]; Wang, Liduo ^[3]; ^[2]

Department of Chemistry, Tsinghua University, Beijing 100084, China; Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States; DOE/OSTI
Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
Department of Chemistry, Tsinghua University, Beijing 100084, China

Not provided.

Research Organization:: Univ. of California, Santa Barbara, CA (United States); Univ. of California, Oakland, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0012541; AC02-05CH11231;

OSTI ID:: 1539017

Journal Information:: Chemistry of Materials, Journal Name: Chemistry of Materials Journal Issue: 14 Vol. 30; ISSN 0897-4756

Publisher:: American Chemical Society (ACS)

Country of Publication:: United States

Language:: English

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Strong thickness-dependent quantum confinement in all-inorganic perovskite Cs ₂ PbI ₄ with a Ruddlesden–Popper structure Ding, Yu-Feng; Zhao, Qian-Qi; Yu, Zhuo-Liang Journal of Materials Chemistry C, Vol. 7, Issue 24 https://doi.org/10.1039/c9tc02267h	journal	January 2019

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