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Title: The electrical properties and distribution of indium in germanium crystals

Abstract

Not provided.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Univ. of South Dakota, Vermillion, SD (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1538621
DOE Contract Number:  
SC0004768
Resource Type:
Journal Article
Journal Name:
Materials Science in Semiconductor Processing
Additional Journal Information:
Journal Volume: 74; Journal Issue: C; Journal ID: ISSN 1369-8001
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
Engineering; Materials Science; Physics

Citation Formats

Wang, Guojian, Mei, Hao, Meng, Xianghua, Mei, Dongming, and Yang, Gang. The electrical properties and distribution of indium in germanium crystals. United States: N. p., 2018. Web. doi:10.1016/j.mssp.2017.11.004.
Wang, Guojian, Mei, Hao, Meng, Xianghua, Mei, Dongming, & Yang, Gang. The electrical properties and distribution of indium in germanium crystals. United States. doi:10.1016/j.mssp.2017.11.004.
Wang, Guojian, Mei, Hao, Meng, Xianghua, Mei, Dongming, and Yang, Gang. Thu . "The electrical properties and distribution of indium in germanium crystals". United States. doi:10.1016/j.mssp.2017.11.004.
@article{osti_1538621,
title = {The electrical properties and distribution of indium in germanium crystals},
author = {Wang, Guojian and Mei, Hao and Meng, Xianghua and Mei, Dongming and Yang, Gang},
abstractNote = {Not provided.},
doi = {10.1016/j.mssp.2017.11.004},
journal = {Materials Science in Semiconductor Processing},
issn = {1369-8001},
number = C,
volume = 74,
place = {United States},
year = {2018},
month = {2}
}