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Title: Strong electron-polarized atom chain in amorphous phase-change memory Ge Sb Te alloy

Abstract

Not provided.

Authors:
; ; ; ; ; ORCiD logo
Publication Date:
Research Org.:
Rensselaer Polytechnic Inst., Troy, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1537894
DOE Contract Number:  
SC0002623
Resource Type:
Journal Article
Journal Name:
Acta Materialia
Additional Journal Information:
Journal Volume: 143; Journal Issue: C; Journal ID: ISSN 1359-6454
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
Materials Science; Metallurgy & Metallurgical Engineering

Citation Formats

Chen, Nian-Ke, Li, Xian-Bin, Wang, Xue-Peng, Tian, Wei Quan, Zhang, Shengbai, and Sun, Hong-Bo. Strong electron-polarized atom chain in amorphous phase-change memory Ge Sb Te alloy. United States: N. p., 2018. Web. doi:10.1016/j.actamat.2017.10.013.
Chen, Nian-Ke, Li, Xian-Bin, Wang, Xue-Peng, Tian, Wei Quan, Zhang, Shengbai, & Sun, Hong-Bo. Strong electron-polarized atom chain in amorphous phase-change memory Ge Sb Te alloy. United States. doi:10.1016/j.actamat.2017.10.013.
Chen, Nian-Ke, Li, Xian-Bin, Wang, Xue-Peng, Tian, Wei Quan, Zhang, Shengbai, and Sun, Hong-Bo. Mon . "Strong electron-polarized atom chain in amorphous phase-change memory Ge Sb Te alloy". United States. doi:10.1016/j.actamat.2017.10.013.
@article{osti_1537894,
title = {Strong electron-polarized atom chain in amorphous phase-change memory Ge Sb Te alloy},
author = {Chen, Nian-Ke and Li, Xian-Bin and Wang, Xue-Peng and Tian, Wei Quan and Zhang, Shengbai and Sun, Hong-Bo},
abstractNote = {Not provided.},
doi = {10.1016/j.actamat.2017.10.013},
journal = {Acta Materialia},
issn = {1359-6454},
number = C,
volume = 143,
place = {United States},
year = {2018},
month = {1}
}