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Title: Layered material GeSe and vertical GeSe/MoS2 p-n heterojunctions


Not provided.

; ; ; ; ;
Publication Date:
Research Org.:
Univ. of Arkansas, Fayetteville, AR (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
DOE Contract Number:  
Resource Type:
Journal Article
Journal Name:
Nano Research
Additional Journal Information:
Journal Volume: 11; Journal Issue: 1; Journal ID: ISSN 1998-0124
Country of Publication:
United States
Chemistry; Science & Technology - Other Topics; Materials Science; Physics

Citation Formats

Yap, Wui Chung, Yang, Zhengfeng, Mehboudi, Mehrshad, Yan, Jia-An, Barraza-Lopez, Salvador, and Zhu, Wenjuan. Layered material GeSe and vertical GeSe/MoS2 p-n heterojunctions. United States: N. p., 2017. Web. doi:10.1007/s12274-017-1646-8.
Yap, Wui Chung, Yang, Zhengfeng, Mehboudi, Mehrshad, Yan, Jia-An, Barraza-Lopez, Salvador, & Zhu, Wenjuan. Layered material GeSe and vertical GeSe/MoS2 p-n heterojunctions. United States. doi:10.1007/s12274-017-1646-8.
Yap, Wui Chung, Yang, Zhengfeng, Mehboudi, Mehrshad, Yan, Jia-An, Barraza-Lopez, Salvador, and Zhu, Wenjuan. Thu . "Layered material GeSe and vertical GeSe/MoS2 p-n heterojunctions". United States. doi:10.1007/s12274-017-1646-8.
title = {Layered material GeSe and vertical GeSe/MoS2 p-n heterojunctions},
author = {Yap, Wui Chung and Yang, Zhengfeng and Mehboudi, Mehrshad and Yan, Jia-An and Barraza-Lopez, Salvador and Zhu, Wenjuan},
abstractNote = {Not provided.},
doi = {10.1007/s12274-017-1646-8},
journal = {Nano Research},
issn = {1998-0124},
number = 1,
volume = 11,
place = {United States},
year = {2017},
month = {8}

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