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Title: Transmission electron microscopy based interface analysis of the origin of the variation in surface recombination of silicon for different surface preparation methods and passivation materials: Transmission electron microscopy based interface analysis

Abstract

Not provided.

Authors:
 [1];  [2];  [2];  [3];  [4]
  1. Department of Materials Science and Engineering, University of Central Florida, Orlando FL USA; Florida Solar Energy Center, University of Central Florida, Cocoa FL USA; c-Si Division, U.S. Photovoltaic Manufacturing Consortium, Orlando FL USA
  2. Fraunhofer-Institute for Solar Energy Systems ISE, Freiburg Germany
  3. Department of Materials Science and Engineering, University of Central Florida, Orlando FL USA; Florida Solar Energy Center, University of Central Florida, Cocoa FL USA; c-Si Division, U.S. Photovoltaic Manufacturing Consortium, Orlando FL USA; CREOL, the College of Optics & Photonics, University of Central Florida, Orlando FL USA
  4. Florida Solar Energy Center, University of Central Florida, Cocoa FL USA; c-Si Division, U.S. Photovoltaic Manufacturing Consortium, Orlando FL USA
Publication Date:
Research Org.:
State Univ. of New York (SUNY), Albany, NY (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1537614
DOE Contract Number:  
EE0004947
Resource Type:
Journal Article
Journal Name:
Physica Status Solidi. A, Applications and Materials Science
Additional Journal Information:
Journal Volume: 214; Journal Issue: 10; Journal ID: ISSN 1862-6300
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
Materials Science; Physics

Citation Formats

Ali, Haider, Moldovan, Anamaria, Mack, Sebastian, Schoenfeld, Winston V., and Davis, Kristopher O. Transmission electron microscopy based interface analysis of the origin of the variation in surface recombination of silicon for different surface preparation methods and passivation materials: Transmission electron microscopy based interface analysis. United States: N. p., 2017. Web. doi:10.1002/pssa.201700286.
Ali, Haider, Moldovan, Anamaria, Mack, Sebastian, Schoenfeld, Winston V., & Davis, Kristopher O. Transmission electron microscopy based interface analysis of the origin of the variation in surface recombination of silicon for different surface preparation methods and passivation materials: Transmission electron microscopy based interface analysis. United States. doi:10.1002/pssa.201700286.
Ali, Haider, Moldovan, Anamaria, Mack, Sebastian, Schoenfeld, Winston V., and Davis, Kristopher O. Mon . "Transmission electron microscopy based interface analysis of the origin of the variation in surface recombination of silicon for different surface preparation methods and passivation materials: Transmission electron microscopy based interface analysis". United States. doi:10.1002/pssa.201700286.
@article{osti_1537614,
title = {Transmission electron microscopy based interface analysis of the origin of the variation in surface recombination of silicon for different surface preparation methods and passivation materials: Transmission electron microscopy based interface analysis},
author = {Ali, Haider and Moldovan, Anamaria and Mack, Sebastian and Schoenfeld, Winston V. and Davis, Kristopher O.},
abstractNote = {Not provided.},
doi = {10.1002/pssa.201700286},
journal = {Physica Status Solidi. A, Applications and Materials Science},
issn = {1862-6300},
number = 10,
volume = 214,
place = {United States},
year = {2017},
month = {6}
}

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