Transmission electron microscopy based interface analysis of the origin of the variation in surface recombination of silicon for different surface preparation methods and passivation materials: Transmission electron microscopy based interface analysis

Ali, Haider; Moldovan, Anamaria; Mack, Sebastian; Schoenfeld, Winston V.; Davis, Kristopher O.

doi:10.1002/pssa.201700286

Title: Transmission electron microscopy based interface analysis of the origin of the variation in surface recombination of silicon for different surface preparation methods and passivation materials: Transmission electron microscopy based interface analysis

Journal Article · Mon Jun 19 00:00:00 EDT 2017 · Physica Status Solidi. A, Applications and Materials Science

DOI:https://doi.org/10.1002/pssa.201700286· OSTI ID:1537614

Ali, Haider ^[1]; Moldovan, Anamaria ^[2]; Mack, Sebastian ^[2]; Schoenfeld, Winston V. ^[3]; Davis, Kristopher O. ^[4]

Department of Materials Science and Engineering, University of Central Florida, Orlando FL USA; Florida Solar Energy Center, University of Central Florida, Cocoa FL USA; c-Si Division, U.S. Photovoltaic Manufacturing Consortium, Orlando FL USA
Fraunhofer-Institute for Solar Energy Systems ISE, Freiburg Germany
Department of Materials Science and Engineering, University of Central Florida, Orlando FL USA; Florida Solar Energy Center, University of Central Florida, Cocoa FL USA; c-Si Division, U.S. Photovoltaic Manufacturing Consortium, Orlando FL USA; CREOL, the College of Optics & Photonics, University of Central Florida, Orlando FL USA
Florida Solar Energy Center, University of Central Florida, Cocoa FL USA; c-Si Division, U.S. Photovoltaic Manufacturing Consortium, Orlando FL USA

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Research Organization:: State Univ. of New York (SUNY), Albany, NY (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

DOE Contract Number:: EE0004947

OSTI ID:: 1537614

Journal Information:: Physica Status Solidi. A, Applications and Materials Science, Vol. 214, Issue 10; ISSN 1862-6300

Publisher:: Wiley

Country of Publication:: United States

Language:: English

References (12)

Surface passivation of crystalline silicon solar cells: a review Aberle, Armin G. Progress in Photovoltaics: Research and Applications, Vol. 8, Issue 5, p. 473-487 https://doi.org/10.1002/1099-159X(200009/10)8:5<473::AID-PIP337>3.0.CO;2-D	journal	January 2000
Status and prospects of Al ₂ O ₃ -based surface passivation schemes for silicon solar cells Dingemans, G.; Kessels, W. M. M. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 30, Issue 4 https://doi.org/10.1116/1.4728205	journal	July 2012
Efficiency Improvement of Silicon Solar Cells by Nitric Acid Oxidization Hu, Yeng-Cheng; Chiu, Ming-Hui; Wang, Likarn Japanese Journal of Applied Physics, Vol. 49, Issue 2 https://doi.org/10.1143/JJAP.49.022301	journal	February 2010
Interface engineering for the passivation of c-Si with O ₃ -based atomic layer deposited AlO _x for solar cell application Lee, Hyunju; Tachibana, Tomihisa; Ikeno, Norihiro Applied Physics Letters, Vol. 100, Issue 14 https://doi.org/10.1063/1.3701280	journal	April 2012
Nitric acid oxidation of Si method for improvement of crystalline Si solar cell characteristics by surface passivation effect Matsumoto, Taketoshi; Hirose, Ryo; Shibata, Fumio Solar Energy Materials and Solar Cells, Vol. 134 https://doi.org/10.1016/j.solmat.2014.11.040	journal	March 2015
Improvement of Minority Carrier Lifetime and Si Solar Cell Characteristics by Nitric Acid Oxidation Method Shibata, Fumio; Ishibashi, Daisuke; Ogawara, Shoji ECS Journal of Solid State Science and Technology, Vol. 3, Issue 7 https://doi.org/10.1149/2.024406jss	journal	January 2014
Overview on SiN surface passivation of crystalline silicon solar cells Aberle, Armin G. Solar Energy Materials and Solar Cells, Vol. 65, Issue 1-4 https://doi.org/10.1016/S0927-0248(00)00099-4	journal	January 2001
High efficiency n-type Si solar cells on Al2O3-passivated boron emitters Benick, Jan; Hoex, Bram; van de Sanden, M. C. M. Applied Physics Letters, Vol. 92, Issue 25 https://doi.org/10.1063/1.2945287	journal	June 2008
Development of a-SiO _x :H solar cells with very high V _oc × FF product : Development of a-SiO Kim, Do Yun; Guijt, Erwin; van Swaaij, René A. C. M. M. Progress in Photovoltaics: Research and Applications, Vol. 23, Issue 6 https://doi.org/10.1002/pip.2581	journal	December 2014
Low-Temperature Surface Passivation of Silicon for Solar Cells Hezel, R. Journal of The Electrochemical Society, Vol. 136, Issue 2 https://doi.org/10.1149/1.2096673	journal	January 1989
Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3 Hoex, B.; Heil, S. B. S.; Langereis, E. Applied Physics Letters, Vol. 89, Issue 4 https://doi.org/10.1063/1.2240736	journal	July 2006
Nitric acid pretreatment for the passivation of boron emitters for n-type base silicon solar cells Mihailetchi, Valentin D.; Komatsu, Yuji; Geerligs, L. J. Applied Physics Letters, Vol. 92, Issue 6 https://doi.org/10.1063/1.2870202	journal	February 2008

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