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Title: A Highly Sensitive UV–vis–NIR All‐Inorganic Perovskite Quantum Dot Phototransistor Based on a Layered Heterojunction

Abstract

Not provided.

Authors:
ORCiD logo [1]; ORCiD logo [2];  [3];  [1];  [4];  [4];  [2]; ORCiD logo [1]
  1. Department of Electrical EngineeringUniversity of Washington Seattle WA 98195 USA
  2. Department of Chemical EngineeringUniversity of Washington Seattle WA 98195 USA
  3. Department of Electrical EngineeringUniversity of Washington Seattle WA 98195 USA; Department of Applied Materials and Optoelectronic EngineeringNational Chi Nan University NanTou 54561 Taiwan
  4. Department of PhysicsUniversity of Washington Seattle WA 98195 USA
Publication Date:
Research Org.:
Univ. of Washington, Seattle, WA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1537395
DOE Contract Number:  
SC0010282
Resource Type:
Journal Article
Journal Name:
Advanced Optical Materials
Additional Journal Information:
Journal Volume: 6; Journal Issue: 14; Journal ID: ISSN 2195-1071
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
Materials Science; Optics

Citation Formats

Zou, Chen, Xi, Yuyin, Huang, Chun‐Ying, Keeler, Ethan G., Feng, Tianyu, Zhu, Shihao, Pozzo, Lilo D., and Lin, Lih Y. A Highly Sensitive UV–vis–NIR All‐Inorganic Perovskite Quantum Dot Phototransistor Based on a Layered Heterojunction. United States: N. p., 2018. Web. doi:10.1002/adom.201800324.
Zou, Chen, Xi, Yuyin, Huang, Chun‐Ying, Keeler, Ethan G., Feng, Tianyu, Zhu, Shihao, Pozzo, Lilo D., & Lin, Lih Y. A Highly Sensitive UV–vis–NIR All‐Inorganic Perovskite Quantum Dot Phototransistor Based on a Layered Heterojunction. United States. doi:10.1002/adom.201800324.
Zou, Chen, Xi, Yuyin, Huang, Chun‐Ying, Keeler, Ethan G., Feng, Tianyu, Zhu, Shihao, Pozzo, Lilo D., and Lin, Lih Y. Sun . "A Highly Sensitive UV–vis–NIR All‐Inorganic Perovskite Quantum Dot Phototransistor Based on a Layered Heterojunction". United States. doi:10.1002/adom.201800324.
@article{osti_1537395,
title = {A Highly Sensitive UV–vis–NIR All‐Inorganic Perovskite Quantum Dot Phototransistor Based on a Layered Heterojunction},
author = {Zou, Chen and Xi, Yuyin and Huang, Chun‐Ying and Keeler, Ethan G. and Feng, Tianyu and Zhu, Shihao and Pozzo, Lilo D. and Lin, Lih Y.},
abstractNote = {Not provided.},
doi = {10.1002/adom.201800324},
journal = {Advanced Optical Materials},
issn = {2195-1071},
number = 14,
volume = 6,
place = {United States},
year = {2018},
month = {5}
}