A Highly Sensitive UV–vis–NIR All-Inorganic Perovskite Quantum Dot Phototransistor Based on a Layered Heterojunction

Zou, Chen; Xi, Yuyin; Huang, Chun‐Ying; Keeler, Ethan G.; Feng, Tianyu; Zhu, Shihao; Pozzo, Lilo D.; Lin, Lih Y.

doi:10.1002/adom.201800324

A Highly Sensitive UV–vis–NIR All-Inorganic Perovskite Quantum Dot Phototransistor Based on a Layered Heterojunction

Journal Article · 06 May 2018 · Advanced Optical Materials

DOI:https://doi.org/10.1002/adom.201800324· OSTI ID:1537395

^[1]; ^[2]; Huang, Chun‐Ying ^[3]; Keeler, Ethan G. ^[1]; Feng, Tianyu ^[4]; Zhu, Shihao ^[4]; Pozzo, Lilo D. ^[2]; ^[1]

Department of Electrical EngineeringUniversity of Washington Seattle WA 98195 USA
Department of Chemical EngineeringUniversity of Washington Seattle WA 98195 USA
Department of Electrical EngineeringUniversity of Washington Seattle WA 98195 USA; Department of Applied Materials and Optoelectronic EngineeringNational Chi Nan University NanTou 54561 Taiwan
Department of PhysicsUniversity of Washington Seattle WA 98195 USA

Not provided.

Research Organization:: Univ. of Washington, Seattle, WA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0010282

OSTI ID:: 1537395

Journal Information:: Advanced Optical Materials, Vol. 6, Issue 14; ISSN 2195-1071

Publisher:: Wiley

Country of Publication:: United States

Language:: English

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