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Title: Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors

Abstract

Not provided.

Authors:
 [1];  [1];  [1];  [1];  [2];  [1];  [1];  [1];  [1];  [1];  [3];  [1]; ORCiD logo [4]
  1. Department of Materials Science and Engineering, University of California, Los Angeles CA 90095 USA
  2. Department of Materials Science and Engineering, University of California, Los Angeles CA 90095 USA; Department of Chemistry, Iowa State University, and Ames Laboratory, Ames IA 50011 USA
  3. Department of Chemistry, Iowa State University, and Ames Laboratory, Ames IA 50011 USA
  4. Department of Chemistry and Biochemistry, University of California, Los Angeles CA 90095 USA
Publication Date:
Research Org.:
Univ. of California, Davis, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1537371
DOE Contract Number:  
SC0008931
Resource Type:
Journal Article
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 30; Journal Issue: 21; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
Chemistry; Science & Technology - Other Topics; Materials Science; Physics

Citation Formats

Guo, Jian, Liu, Yuan, Ma, Yue, Zhu, Enbo, Lee, Shannon, Lu, Zixuan, Zhao, Zipeng, Xu, Changhao, Lee, Sung-Joon, Wu, Hao, Kovnir, Kirill, Huang, Yu, and Duan, Xiangfeng. Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors. United States: N. p., 2018. Web. doi:10.1002/adma.201705934.
Guo, Jian, Liu, Yuan, Ma, Yue, Zhu, Enbo, Lee, Shannon, Lu, Zixuan, Zhao, Zipeng, Xu, Changhao, Lee, Sung-Joon, Wu, Hao, Kovnir, Kirill, Huang, Yu, & Duan, Xiangfeng. Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors. United States. doi:10.1002/adma.201705934.
Guo, Jian, Liu, Yuan, Ma, Yue, Zhu, Enbo, Lee, Shannon, Lu, Zixuan, Zhao, Zipeng, Xu, Changhao, Lee, Sung-Joon, Wu, Hao, Kovnir, Kirill, Huang, Yu, and Duan, Xiangfeng. Mon . "Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors". United States. doi:10.1002/adma.201705934.
@article{osti_1537371,
title = {Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors},
author = {Guo, Jian and Liu, Yuan and Ma, Yue and Zhu, Enbo and Lee, Shannon and Lu, Zixuan and Zhao, Zipeng and Xu, Changhao and Lee, Sung-Joon and Wu, Hao and Kovnir, Kirill and Huang, Yu and Duan, Xiangfeng},
abstractNote = {Not provided.},
doi = {10.1002/adma.201705934},
journal = {Advanced Materials},
issn = {0935-9648},
number = 21,
volume = 30,
place = {United States},
year = {2018},
month = {4}
}