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Title: Temporal and spatial valley dynamics in two-dimensional semiconductors probed via Kerr rotation

Abstract

Not provided.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Excitonics (CE); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1535855
DOE Contract Number:  
SC0001088
Resource Type:
Journal Article
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 95; Journal Issue: 7; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
Materials Science; Physics

Citation Formats

Huang, Jiani, Hoang, Thang B., Ming, Tian, Kong, Jing, and Mikkelsen, Maiken H. Temporal and spatial valley dynamics in two-dimensional semiconductors probed via Kerr rotation. United States: N. p., 2017. Web. doi:10.1103/physrevb.95.075428.
Huang, Jiani, Hoang, Thang B., Ming, Tian, Kong, Jing, & Mikkelsen, Maiken H. Temporal and spatial valley dynamics in two-dimensional semiconductors probed via Kerr rotation. United States. doi:10.1103/physrevb.95.075428.
Huang, Jiani, Hoang, Thang B., Ming, Tian, Kong, Jing, and Mikkelsen, Maiken H. Wed . "Temporal and spatial valley dynamics in two-dimensional semiconductors probed via Kerr rotation". United States. doi:10.1103/physrevb.95.075428.
@article{osti_1535855,
title = {Temporal and spatial valley dynamics in two-dimensional semiconductors probed via Kerr rotation},
author = {Huang, Jiani and Hoang, Thang B. and Ming, Tian and Kong, Jing and Mikkelsen, Maiken H.},
abstractNote = {Not provided.},
doi = {10.1103/physrevb.95.075428},
journal = {Physical Review B},
issn = {2469-9950},
number = 7,
volume = 95,
place = {United States},
year = {2017},
month = {2}
}

Works referenced in this record:

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
journal, November 2012

  • Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras
  • Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712
  • DOI: 10.1038/nnano.2012.193

Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010


Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
journal, May 2013

  • van der Zande, Arend M.; Huang, Pinshane Y.; Chenet, Daniel A.
  • Nature Materials, Vol. 12, Issue 6, p. 554-561
  • DOI: 10.1038/nmat3633

Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers
journal, June 2013

  • Najmaei, Sina; Liu, Zheng; Zhou, Wu
  • Nature Materials, Vol. 12, Issue 8, p. 754-759
  • DOI: 10.1038/nmat3673