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Title: Low-temperature semiconductor band-gap thermal shifts: T 4 shifts from ordinary acoustic and T 2 from piezoacoustic coupling

Abstract

Not provided.

Authors:
;
Publication Date:
Research Org.:
State Univ. of New York (SUNY), Albany, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1535833
DOE Contract Number:  
FG02-08ER46550
Resource Type:
Journal Article
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 95; Journal Issue: 3; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
Materials Science; Physics

Citation Formats

Allen, Philip B., and Nery, Jean Paul. Low-temperature semiconductor band-gap thermal shifts: T4 shifts from ordinary acoustic and T2 from piezoacoustic coupling. United States: N. p., 2017. Web. doi:10.1103/physrevb.95.035211.
Allen, Philip B., & Nery, Jean Paul. Low-temperature semiconductor band-gap thermal shifts: T4 shifts from ordinary acoustic and T2 from piezoacoustic coupling. United States. doi:10.1103/physrevb.95.035211.
Allen, Philip B., and Nery, Jean Paul. Sun . "Low-temperature semiconductor band-gap thermal shifts: T4 shifts from ordinary acoustic and T2 from piezoacoustic coupling". United States. doi:10.1103/physrevb.95.035211.
@article{osti_1535833,
title = {Low-temperature semiconductor band-gap thermal shifts: T4 shifts from ordinary acoustic and T2 from piezoacoustic coupling},
author = {Allen, Philip B. and Nery, Jean Paul},
abstractNote = {Not provided.},
doi = {10.1103/physrevb.95.035211},
journal = {Physical Review B},
issn = {2469-9950},
number = 3,
volume = 95,
place = {United States},
year = {2017},
month = {1}
}

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