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Title: Suppressing the spin relaxation of electrons in silicon

Abstract

Not provided.

Authors:
; ;
Publication Date:
Research Org.:
Univ. of Rochester, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1535832
DOE Contract Number:  
SC0014349
Resource Type:
Journal Article
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 95; Journal Issue: 3; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
Materials Science; Physics

Citation Formats

Chalaev, Oleg, Song, Yang, and Dery, Hanan. Suppressing the spin relaxation of electrons in silicon. United States: N. p., 2017. Web. doi:10.1103/physrevb.95.035204.
Chalaev, Oleg, Song, Yang, & Dery, Hanan. Suppressing the spin relaxation of electrons in silicon. United States. doi:10.1103/physrevb.95.035204.
Chalaev, Oleg, Song, Yang, and Dery, Hanan. Sun . "Suppressing the spin relaxation of electrons in silicon". United States. doi:10.1103/physrevb.95.035204.
@article{osti_1535832,
title = {Suppressing the spin relaxation of electrons in silicon},
author = {Chalaev, Oleg and Song, Yang and Dery, Hanan},
abstractNote = {Not provided.},
doi = {10.1103/physrevb.95.035204},
journal = {Physical Review B},
issn = {2469-9950},
number = 3,
volume = 95,
place = {United States},
year = {2017},
month = {1}
}

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