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Title: Tunneling, Current Gain, and Transconductance in Silicon-Germanium Heterojunction Bipolar Transistors Operating at Millikelvin Temperatures

Abstract

Not provided.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Georgia Inst. of Technology, Atlanta, GA (United States); Lockheed Martin Corpration, Litteton, CO (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1535766
DOE Contract Number:  
FG02-06ER46281; AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 8; Journal Issue: 2; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
Physics

Citation Formats

Davidović, D., Ying, H., Dark, J., Wier, B. R., Ge, L., Lourenco, N. E., Omprakash, A. P., Mourigal, M., and Cressler, J. D. Tunneling, Current Gain, and Transconductance in Silicon-Germanium Heterojunction Bipolar Transistors Operating at Millikelvin Temperatures. United States: N. p., 2017. Web. doi:10.1103/physrevapplied.8.024015.
Davidović, D., Ying, H., Dark, J., Wier, B. R., Ge, L., Lourenco, N. E., Omprakash, A. P., Mourigal, M., & Cressler, J. D. Tunneling, Current Gain, and Transconductance in Silicon-Germanium Heterojunction Bipolar Transistors Operating at Millikelvin Temperatures. United States. doi:10.1103/physrevapplied.8.024015.
Davidović, D., Ying, H., Dark, J., Wier, B. R., Ge, L., Lourenco, N. E., Omprakash, A. P., Mourigal, M., and Cressler, J. D. Tue . "Tunneling, Current Gain, and Transconductance in Silicon-Germanium Heterojunction Bipolar Transistors Operating at Millikelvin Temperatures". United States. doi:10.1103/physrevapplied.8.024015.
@article{osti_1535766,
title = {Tunneling, Current Gain, and Transconductance in Silicon-Germanium Heterojunction Bipolar Transistors Operating at Millikelvin Temperatures},
author = {Davidović, D. and Ying, H. and Dark, J. and Wier, B. R. and Ge, L. and Lourenco, N. E. and Omprakash, A. P. and Mourigal, M. and Cressler, J. D.},
abstractNote = {Not provided.},
doi = {10.1103/physrevapplied.8.024015},
journal = {Physical Review Applied},
issn = {2331-7019},
number = 2,
volume = 8,
place = {United States},
year = {2017},
month = {8}
}

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