Radiation-induced direct bandgap transition in few-layer MoS2

Wang, Bo; Yang, Sisi; Chen, Jihan; Mann, Colin; Bushmaker, Adam; Cronin, Stephen B.

doi:10.1063/1.5005121

Title: Radiation-induced direct bandgap transition in few-layer MoS₂

Journal Article · Wed Sep 27 00:00:00 EDT 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5005121· OSTI ID:1535349

Wang, Bo ^[1]; Yang, Sisi ^[1]; Chen, Jihan ^[1]; Mann, Colin ^[2]; Bushmaker, Adam ^[2];

^[1]

Univ. of Southern California, Los Angeles, CA (United States)
The Aerospace Corporation, El Segundo, CA (United States)

We report photoluminescence (PL) spectroscopy of air-suspended and substrate-supported molybdenum disulfide (MoS₂) taken before and after exposure to proton radiation. For 2-, 3-, and 4-layer MoS₂, the radiation causes a substantial (>10×) suppression of the indirect bandgap emission, likely due to a radiation-induced decoupling of the layers. For all samples measured (including the monolayer), we see the emergence of a defect-induced shoulder peak at around 1.7 eV, which is redshifted from the main direct bandgap emission at 1.85 eV. Here, defects induced by the radiation trap the excitons and cause them to be redshifted from the main direct band emission. After annealing, the defect-induced sideband disappears, but the indirect band emission remains suppressed, indicating a permanent transition into a direct bandgap material. While suspended 2-, 3-, and 4-layer MoS₂ show no change in the intensity of the direct band emission after radiation exposure, substrate-supported MoS₂ exhibits an approximately 2-fold increase in the direct bandgap emission after irradiation. Suspended monolayer MoS₂ shows a 2–3× drop in PL intensity; however, substrate-supported monolayer MoS₂ shows a 2-fold increase in the direct band emission.

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Research Organization:: Univ. of Southern California, Los Angeles, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: FG02-07ER46376

OSTI ID:: 1535349

Alternate ID(s):: OSTI ID: 1395188

Journal Information:: Applied Physics Letters, Vol. 111, Issue 13; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 10 works

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References (17)

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Cited By (4)

Electronic transport in MoSe ₂ FETs modified by latent tracks created by swift heavy ion irradiation Zhang, S. X.; Liu, J.; Zeng, J. Journal of Physics D: Applied Physics, Vol. 52, Issue 12 https://doi.org/10.1088/1361-6463/aafd82	journal	January 2019
Recent advances in synthesis and biosensors of two-dimensional MoS ₂ Zhu, Xiaona; Ding, Ran; Wang, Zegao Nanotechnology, Vol. 30, Issue 50 https://doi.org/10.1088/1361-6528/ab42fe	journal	October 2019
Controlling neutral and charged excitons in MoS ₂ with defects Burns, Kory; Tan, Anne Marie Z.; Gabriel, Adam Journal of Materials Research, Vol. 35, Issue 8 https://doi.org/10.1557/jmr.2019.404	journal	January 2020
Recent Progress on Irradiation-Induced Defect Engineering of Two-Dimensional 2H-MoS2 Few Layers Zhao, Guang-Yi; Deng, Hua; Tyree, Nathaniel Applied Sciences, Vol. 9, Issue 4 https://doi.org/10.3390/app9040678	journal	February 2019

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